Transistors - Bipolar (BJT)

Transistors - Bipolar (BJT) - Single

Part Number	Description / PDF	Quantity
2SAR552PT100 ROHM Semiconductor	TRANS PNP 30V 3A MPT3	860
2SAR293PT100 ROHM Semiconductor	TRANS PNP 30V 1A MPT3	0
2SAR523UBTL ROHM Semiconductor	TRANS PNP 50V 0.1A UMT3FM	3
2SB1184TLP ROHM Semiconductor	TRANS PNP 50V 3A SOT-428	0
2SA2088U3T106 ROHM Semiconductor	2SA2088U3 IS THE HIGH SPEED SWIT	0
2SARA41CT116R ROHM Semiconductor	HIGH-VOLTAGE AMPLIFIER TRANSISTO	2580
BC857BT116 ROHM Semiconductor	TRANS PNP 45V 0.1A SST3	1001
UMT2222AT106 ROHM Semiconductor	TRANS NPN 40V 0.6A SOT-323	566
BC858BWT106 ROHM Semiconductor	TRANS PNP 30V 0.1A SOT-323	0
2SD1898T100Q ROHM Semiconductor	TRANS NPN 80V 1A SOT-89	28
2SC5661T2LP ROHM Semiconductor	TRANS NPN 20V 0.05A VMT3	3563
2SD1383KT146B ROHM Semiconductor	TRANS NPN DARL 32V 0.3A SOT-346	213
2SAR533P5T100 ROHM Semiconductor	PNP -50V -3A MEDIUM POWER TRANSI	73
2SCR554P5T100 ROHM Semiconductor	NPN 80V 1.5A MEDIUM POWER TRANSI	10172
2SD2670TL ROHM Semiconductor	TRANS NPN 12V 3A TSMT3	5291
QST6TR ROHM Semiconductor	TRANS PNP 12V 2A TSMT6	0
2SC5865TLR ROHM Semiconductor	TRANS NPN 60V 1A TSMD3	0
BC848BHZGT116 ROHM Semiconductor	NPN GENERAL PURPOSE TRANSISTOR	960
2SB1275TLP ROHM Semiconductor	TRANS PNP 160V 1.5A SOT-428	2500
2SC5866TLR ROHM Semiconductor	TRANS NPN 60V 2A TSMT3	0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

Type	Functional Characteristics	Application Examples
NPN Transistor	Majority carriers: electrons. Requires positive base current for conduction.	Low-noise amplifiers, digital logic circuits
PNP Transistor	Majority carriers: holes. Conducts with negative base current.	Power supply circuits, motor controllers
High-Frequency BJT	Optimized for RF/microwave signal amplification (f_T > 100 MHz)	Wireless communication systems, radar
Power BJT	High current/voltage ratings (I_C > 1A, V_CE > 50V)	Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

Emitter: Heavily doped region emitting charge carriers
Base: Thin, lightly doped middle region controlling carrier flow
Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

Parameter	Description	Importance
Current Gain (h_FE)	Ratio of collector to base current (10-1000)	Determines amplification capability
Transition Frequency (f_T)	Frequency at which current gain drops to 1	Limits high-frequency performance
Max Collector Current (I_Cmax)	Maximum allowable continuous collector current	Defines power handling capability
Breakdown Voltage (V_CEO)	Max voltage between collector and emitter	Prevents device failure under stress
Saturation Voltage (V_CEsat)	Voltage drop in fully conducting state	Affects power efficiency in switching

5. Application Areas

Consumer Electronics: Audio amplifiers, LED drivers
Automotive: Engine control units, electric vehicle inverters
Industrial: PLCs, motor controllers
Telecommunications: RF power amplifiers, fiber optic transceivers
Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

Manufacturer	Product Series	Key Specifications	Typical Use
ON Semiconductor	2N3904	hFE: 100-300, fT: 300 MHz	General-purpose switching
Infineon	BC547	VCEO: 50V, ICmax: 100mA	Analog signal amplification
STMicroelectronics	2SD2656	ICmax: 15A, VCEO: 80V	Power inverter applications
Diodes Inc.	BFR93A	fT: 10 GHz, Noise Figure: 2dB	High-frequency front-end amplifiers

7. Selection Guidelines

Determine operating frequency: Select fT > 3 target frequency
Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
Thermal considerations: Calculate power dissipation (P=V_CE I_C)
Package type: TO-92 for low power, TO-220 for high-power applications
Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

High-frequency BJTs operating beyond 100 GHz for 6G communication
Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
Wide-bandgap materials (SiC/GaN) for higher power density
Miniaturization through chip-scale packaging
Improved thermal management solutions for automotive applications