Transistors - Bipolar (BJT)

Transistors - Bipolar (BJT) - Single

Part Number	Description / PDF	Quantity
2SD1758TLP ROHM Semiconductor	TRANS NPN 32V 2A SOT-428	0
2SB1188T100Q ROHM Semiconductor	TRANS PNP 32V 2A SO-89	89
US6T7TR ROHM Semiconductor	TRANS PNP 30V 1.5A TUMT6	0
MMSTA13T146 ROHM Semiconductor	TRANS NPN 30V 0.3A SOT-346 SMT3	2835
2SB1412TLR ROHM Semiconductor	TRANS PNP 20V 5A SOT-428	2515
MMST8598T146 ROHM Semiconductor	TRANS PNP 60V 0.2A SC-59 SMT3	0
2SB1308T100R ROHM Semiconductor	TRANS PNP 20V 3A SOT89	0
2SA2029FHAT2LQ ROHM Semiconductor	PNP GENERAL PURPOSE AMPLIFICATIO	7340
BC847BHZGT116 ROHM Semiconductor	NPN GENERAL PURPOSE TRANSISTOR	3691
2SC4097T106Q ROHM Semiconductor	TRANS NPN 32V 0.5A SOT-323	3
2SD2673TL ROHM Semiconductor	TRANS NPN 30V 3A TSMT 3	2802
2SC4081T106R ROHM Semiconductor	TRANS NPN 50V 0.15A SOT-323	14831
2SB1181TLP ROHM Semiconductor	TRANS PNP 80V 1A SOT-428	0
2SARA41CT116S ROHM Semiconductor	HIGH-VOLTAGE AMPLIFIER TRANSISTO	2990
2SC4617TLS ROHM Semiconductor	TRANS NPN 50V 0.15A SOT-416	1605
BC857BHZGT116 ROHM Semiconductor	PNP GENERAL PURPOSE TRANSISTOR (	1743
BCW70T116 ROHM Semiconductor	TRANS PNP 45V 0.1A SST3	0
QSL11TR ROHM Semiconductor	TRANS PNP 30V 1A TSMT5	0
2SCR533P5T100 ROHM Semiconductor	NPN 50V 3A MEDIUM POWER TRANSIST	302
2SB1707TL ROHM Semiconductor	TRANS PNP 12V 4A TSMT3	2185

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

Type	Functional Characteristics	Application Examples
NPN Transistor	Majority carriers: electrons. Requires positive base current for conduction.	Low-noise amplifiers, digital logic circuits
PNP Transistor	Majority carriers: holes. Conducts with negative base current.	Power supply circuits, motor controllers
High-Frequency BJT	Optimized for RF/microwave signal amplification (f_T > 100 MHz)	Wireless communication systems, radar
Power BJT	High current/voltage ratings (I_C > 1A, V_CE > 50V)	Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

Emitter: Heavily doped region emitting charge carriers
Base: Thin, lightly doped middle region controlling carrier flow
Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

Parameter	Description	Importance
Current Gain (h_FE)	Ratio of collector to base current (10-1000)	Determines amplification capability
Transition Frequency (f_T)	Frequency at which current gain drops to 1	Limits high-frequency performance
Max Collector Current (I_Cmax)	Maximum allowable continuous collector current	Defines power handling capability
Breakdown Voltage (V_CEO)	Max voltage between collector and emitter	Prevents device failure under stress
Saturation Voltage (V_CEsat)	Voltage drop in fully conducting state	Affects power efficiency in switching

5. Application Areas

Consumer Electronics: Audio amplifiers, LED drivers
Automotive: Engine control units, electric vehicle inverters
Industrial: PLCs, motor controllers
Telecommunications: RF power amplifiers, fiber optic transceivers
Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

Manufacturer	Product Series	Key Specifications	Typical Use
ON Semiconductor	2N3904	hFE: 100-300, fT: 300 MHz	General-purpose switching
Infineon	BC547	VCEO: 50V, ICmax: 100mA	Analog signal amplification
STMicroelectronics	2SD2656	ICmax: 15A, VCEO: 80V	Power inverter applications
Diodes Inc.	BFR93A	fT: 10 GHz, Noise Figure: 2dB	High-frequency front-end amplifiers

7. Selection Guidelines

Determine operating frequency: Select fT > 3 target frequency
Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
Thermal considerations: Calculate power dissipation (P=V_CE I_C)
Package type: TO-92 for low power, TO-220 for high-power applications
Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

High-frequency BJTs operating beyond 100 GHz for 6G communication
Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
Wide-bandgap materials (SiC/GaN) for higher power density
Miniaturization through chip-scale packaging
Improved thermal management solutions for automotive applications