Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SC5868TLR

2SC5868TLR

ROHM Semiconductor

TRANS NPN 60V 0.5A TSMT3

15428

2SCR544RTL

2SCR544RTL

ROHM Semiconductor

TRANS NPN 80V 2.5A TSMT3

2258

2SB1705TL

2SB1705TL

ROHM Semiconductor

TRANS PNP 12V 3A TSMT3

5959

SSTA28T116

SSTA28T116

ROHM Semiconductor

TRANS NPN DARL 80V 0.3A SOT23

0

2SCR372P5T100R

2SCR372P5T100R

ROHM Semiconductor

NPN 120V 700MA MEDIUM POWER DRIV

1093

2SC4672T100P

2SC4672T100P

ROHM Semiconductor

TRANS NPN 50V 2A SOT-89

0

2SAR514RTL

2SAR514RTL

ROHM Semiconductor

TRANS PNP 80V 0.7A TSMT3

1200

2SAR522UBTL

2SAR522UBTL

ROHM Semiconductor

TRANS PNP 20V 0.2A UMT3FM

2286

2SAR562F3TR

2SAR562F3TR

ROHM Semiconductor

PNP DRIVER TRANSISTOR

2865

SST3906T116

SST3906T116

ROHM Semiconductor

TRANS PNP 40V 0.2A SST3

6795

2SC2411KT146R

2SC2411KT146R

ROHM Semiconductor

TRANS NPN 32V 0.5A SOT-346

599

2SCR502UBTL

2SCR502UBTL

ROHM Semiconductor

TRANS NPN 30V 0.5A UMT3F

2362

2SB1709TL

2SB1709TL

ROHM Semiconductor

TRANS PNP 12V 1.5A TSMT3

1811

2SA2029T2LQ

2SA2029T2LQ

ROHM Semiconductor

TRANS PNP 50V 0.15A VMT3

14026

MMST3906T146

MMST3906T146

ROHM Semiconductor

TRANS PNP 40V 0.2A SOT-346

0

SST3904T116

SST3904T116

ROHM Semiconductor

TRANS NPN 40V 0.2A SST3

8337

2SC5585TL

2SC5585TL

ROHM Semiconductor

TRANS NPN 12V 0.5A SOT-416

2777

2SCR542PT100

2SCR542PT100

ROHM Semiconductor

TRANS NPN 30V 5A MPT3

758

MMST8098T146

MMST8098T146

ROHM Semiconductor

TRANS NPN 60V 0.2A SC-59 SMT3

2990

2SD2654TLV

2SD2654TLV

ROHM Semiconductor

TRANS NPN 50V 0.15A SOT-416

902

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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