Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SC3906KT146R

2SC3906KT146R

ROHM Semiconductor

TRANS NPN 120V 0.05A SOT-346

2986

2SCR573D3FRATL

2SCR573D3FRATL

ROHM Semiconductor

2SCR573D3FRA IS A POWER TRANSIST

2026

2SCR512PT100

2SCR512PT100

ROHM Semiconductor

TRANS NPN 30V 2A MPT3

0

FML9T148

FML9T148

ROHM Semiconductor

TRANS NPN 12V 1.5A SMT5

0

2SARA41CHZGT116S

2SARA41CHZGT116S

ROHM Semiconductor

HIGH-VOLTAGE AMPLIFIER TRANSISTO

2990

QSX2TR

QSX2TR

ROHM Semiconductor

TRANS NPN 30V 5A TSMT6

0

MMST4403T146

MMST4403T146

ROHM Semiconductor

TRANS PNP 40V 0.6A SOT-346

0

2SA1579T106R

2SA1579T106R

ROHM Semiconductor

TRANS PNP 120V 0.05A SOT-323

147

2SB1733TL

2SB1733TL

ROHM Semiconductor

TRANS PNP 30V 1A TUMT3

375

QST7TR

QST7TR

ROHM Semiconductor

TRANS PNP 30V 1.5A TSMT6

0

UMT3904T106

UMT3904T106

ROHM Semiconductor

TRANS NPN 40V 0.2A SOT-323

0

2SD1757KT146Q

2SD1757KT146Q

ROHM Semiconductor

TRANS NPN 15V 0.5A SOT-346

3341

2SB1689T106

2SB1689T106

ROHM Semiconductor

TRANS PNP 12V 1.5A SOT-323

422

2SCR543DTL

2SCR543DTL

ROHM Semiconductor

TRANS NPN 50V 4A CPT3

0

2SA1514KT146R

2SA1514KT146R

ROHM Semiconductor

TRANS PNP 120V 0.05A SOT-346

2974

2SAR553PT100

2SAR553PT100

ROHM Semiconductor

TRANS PNP 50V 2A SOT-89

1000

2SD2318TLU

2SD2318TLU

ROHM Semiconductor

TRANS NPN 60V 3A SOT-428

11

2SCR513PFRAT100

2SCR513PFRAT100

ROHM Semiconductor

NPN DRIVER TRANSISTOR (CORRESPON

829

2SC4617EBTLR

2SC4617EBTLR

ROHM Semiconductor

TRANS NPN 50V 0.15A EMT3

0

2SCR512RTL

2SCR512RTL

ROHM Semiconductor

TRANS NPN 30V 2A TSMT3

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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