Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SCR502EBTL

2SCR502EBTL

ROHM Semiconductor

TRANS NPN 30V 0.5A EMT3F

1675

2SA1037AKT146Q

2SA1037AKT146Q

ROHM Semiconductor

TRANS PNP 50V 0.15A SOT-346

4233

2SCRC41CHZGT116S

2SCRC41CHZGT116S

ROHM Semiconductor

HIGH-VOLTAGE AMPLIFIER TRANSISTO

2655

2SB1561T100Q

2SB1561T100Q

ROHM Semiconductor

TRANS PNP 60V 2A SOT-89

770

2SC5876T106R

2SC5876T106R

ROHM Semiconductor

TRANS NPN 60V 0.5A SOT-323

119

2SD2703TL

2SD2703TL

ROHM Semiconductor

TRANS NPN 30V 1A TUMT3

53

2SCR514PFRAT100

2SCR514PFRAT100

ROHM Semiconductor

NPN DRIVER TRANSISTOR (CORRESPON

413

2SAR542PT100

2SAR542PT100

ROHM Semiconductor

TRANS PNP 30V 2A MPT3

318

2SD1484KT146R

2SD1484KT146R

ROHM Semiconductor

TRANS NPN 50V 0.5A SOT-346

893

MMST2907AT146

MMST2907AT146

ROHM Semiconductor

TRANS PNP 60V 0.6A SOT-346

3775

2SAR513P5T100

2SAR513P5T100

ROHM Semiconductor

PNP -50V -1A MEDIUM POWER TRANSI

0

2SD1664T100P

2SD1664T100P

ROHM Semiconductor

TRANS NPN 32V 1A SOT-89

865

2SA1774EBTLP

2SA1774EBTLP

ROHM Semiconductor

TRANS PNP 50V 0.15A EMT3

0

2SA1577T106R

2SA1577T106R

ROHM Semiconductor

TRANS PNP 32V 0.5A SOT-323

679

US6T6TR

US6T6TR

ROHM Semiconductor

TRANS PNP 30V 2A TUMT6

0

2SA1862TLP

2SA1862TLP

ROHM Semiconductor

TRANS PNP 400V 2A SOT-428

0

2SC4102U3HZGT106S

2SC4102U3HZGT106S

ROHM Semiconductor

HIGH-VOLTAGE AMPLIFIER TRANSISTO

2985

2SC4726TLN

2SC4726TLN

ROHM Semiconductor

TRANS NPN 11V 0.05A SOT-416

1471

2SD1766T100R

2SD1766T100R

ROHM Semiconductor

TRANS NPN 32V 2A SOT-89

0

2SD1733TLR

2SD1733TLR

ROHM Semiconductor

TRANS NPN 80V 1A SOT-428

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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