Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SCRC41CT116R

2SCRC41CT116R

ROHM Semiconductor

HIGH-VOLTAGE AMPLIFIER TRANSISTO

2880

2SC4081U3HZGT106R

2SC4081U3HZGT106R

ROHM Semiconductor

2SC4081U3HZG IS A TRANSISTOR WIT

2191

2SD1767T100R

2SD1767T100R

ROHM Semiconductor

TRANS NPN 80V 0.7A SOT-89

543

2SAR542PFRAT100

2SAR542PFRAT100

ROHM Semiconductor

PNP DRIVER TRANSISTOR (CORRESPON

787

2SCR513PT100

2SCR513PT100

ROHM Semiconductor

TRANS NPN 50V 1A MPT3

684

2SD1949T106R

2SD1949T106R

ROHM Semiconductor

TRANS NPN 50V 0.5A SOT-323

177

2SC5053T100R

2SC5053T100R

ROHM Semiconductor

TRANS NPN 50V 1A SOT-89

22

2SD1980TL

2SD1980TL

ROHM Semiconductor

TRANS NPN DARL 100V 2A SOT-428

18756

2SAR554RTL

2SAR554RTL

ROHM Semiconductor

TRANS PNP 80V 1.5A TSMT3

2537

2SAR513PFRAT100

2SAR513PFRAT100

ROHM Semiconductor

PNP DRIVER TRANSISTOR (CORRESPON

1

2SA1774TLR

2SA1774TLR

ROHM Semiconductor

TRANS PNP 50V 0.15A SOT-416

1503

BC858BT116

BC858BT116

ROHM Semiconductor

TRANS PNP 30V 0.1A SST3

0

2SAR514PT100

2SAR514PT100

ROHM Semiconductor

TRANS PNP 80V 0.7A MPT3

0

2SB1197KT146Q

2SB1197KT146Q

ROHM Semiconductor

TRANS PNP 32V 0.8A SOT-346

0

2SA1576U3HZGT106Q

2SA1576U3HZGT106Q

ROHM Semiconductor

GENERAL PURPOSE TRANSISTOR (-50V

1027

2SC4083T106P

2SC4083T106P

ROHM Semiconductor

TRANS NPN 11V 0.05A SOT-323

2781

2SAR340PT100P

2SAR340PT100P

ROHM Semiconductor

PNP -100MA -400V MIDDLE POWER TR

325

2SCR502EBHZGTL

2SCR502EBHZGTL

ROHM Semiconductor

2SCR502EBHZG IS A BIPOLAR TRANSI

3000

2SB1580T100

2SB1580T100

ROHM Semiconductor

TRANS PNP DARL 100V 2A SOT-89

0

SST3904HZGT116

SST3904HZGT116

ROHM Semiconductor

NPN GENERAL PURPOSE TRANSISTOR

1820

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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