Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SC4672T100Q

2SC4672T100Q

ROHM Semiconductor

TRANS NPN 50V 2A SOT-89

2206

2SD2661T100

2SD2661T100

ROHM Semiconductor

TRANS NPN 12V 2A MPT3

0

2SC3837KT146N

2SC3837KT146N

ROHM Semiconductor

TRANS NPN 20V 0.05A SOT-346

0

2SC5658T2LS

2SC5658T2LS

ROHM Semiconductor

TRANS NPN 50V 0.15A VMT3

5658

2SC4617EBHZGTLR

2SC4617EBHZGTLR

ROHM Semiconductor

2SC4617EBHZG IS BIPOLAR TRANSIST

87

2SB1184TLQ

2SB1184TLQ

ROHM Semiconductor

TRANS PNP 60V 3A SOT-428

0

2SAR552P5T100

2SAR552P5T100

ROHM Semiconductor

PNP -30V -3A MEDIUM POWER TRANSI

1090

2SC3838KT146P

2SC3838KT146P

ROHM Semiconductor

TRANS NPN 11V 0.05A SOT-346

49

2SB1260T100R

2SB1260T100R

ROHM Semiconductor

TRANS PNP 80V 1A SOT-89

1870

2SD2537T100V

2SD2537T100V

ROHM Semiconductor

TRANS NPN 25V 1.2A SOT-89

595

2SCR293PT100

2SCR293PT100

ROHM Semiconductor

TRANS NPN 30V 1A MPT3

0

2SD2212T100

2SD2212T100

ROHM Semiconductor

TRANS NPN DARL 60V 2A SOT-89

0

2SB1183TL

2SB1183TL

ROHM Semiconductor

TRANS PNP DARL 40V 2A SOT-428

0

2SD1963T100R

2SD1963T100R

ROHM Semiconductor

TRANS NPN 20V 3A SOT-89

0

2SD2657TL

2SD2657TL

ROHM Semiconductor

TRANS NPN 30V 1.5A TSMT 3

6261

2SD1918TLQ

2SD1918TLQ

ROHM Semiconductor

TRANS NPN 160V 1.5A SOT-428

2093

2SD2652T106

2SD2652T106

ROHM Semiconductor

TRANS NPN 12V 1.5A SOT-323

2990

2SAR553P5T100

2SAR553P5T100

ROHM Semiconductor

PNP -50V -2A MEDIUM POWER TRANSI

1000

2SA1834TLR

2SA1834TLR

ROHM Semiconductor

TRANS PNP 20V 10A SOT-428

4567

UML1NTR

UML1NTR

ROHM Semiconductor

TRANS PNP 50V 0.15A SOT353

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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