Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2SAR554PFRAT100

2SAR554PFRAT100

ROHM Semiconductor

PNP DRIVER TRANSISTOR (CORRESPON

1865

2SAR544RTL

2SAR544RTL

ROHM Semiconductor

TRANS PNP 80V 2.5A TSMT3

2378

FML10T148

FML10T148

ROHM Semiconductor

TRANS NPN 12V 1.5A SMT5

0

BCW30T116

BCW30T116

ROHM Semiconductor

TRANS PNP 32V 0.1A SST3

0

2SAR552PFRAT100

2SAR552PFRAT100

ROHM Semiconductor

PNP DRIVER TRANSISTOR (CORRESPON

1289

2SB1181TLR

2SB1181TLR

ROHM Semiconductor

TRANS PNP 80V 1A SOT-428

75

2SAR514PFRAT100

2SAR514PFRAT100

ROHM Semiconductor

PNP DRIVER TRANSISTOR (CORRESPON

261

BCX70KT116

BCX70KT116

ROHM Semiconductor

TRANS NPN 45V 0.2A SST3

0

BCX70JT116

BCX70JT116

ROHM Semiconductor

TRANS NPN 45V 0.2A SST3

0

2SD1664T100Q

2SD1664T100Q

ROHM Semiconductor

TRANS NPN 32V 1A SOT-89

958

2SCR553PT100

2SCR553PT100

ROHM Semiconductor

TRANS NPN 50V 2A SOT-89

1406

BSS64AHZGT116

BSS64AHZGT116

ROHM Semiconductor

64AHZG IS A SOT-23 PACKAGE TRANS

1159

2SCR544P5T100

2SCR544P5T100

ROHM Semiconductor

NPN 80V 2.5A MEDIUM POWER TRANSI

1035

2SA2030T2L

2SA2030T2L

ROHM Semiconductor

TRANS PNP 12V 0.5A VMT3

7188

2SB1182TLR

2SB1182TLR

ROHM Semiconductor

TRANS PNP 32V 2A SOT-428

117

2SCR544PT100

2SCR544PT100

ROHM Semiconductor

TRANS NPN 80V 2.5A SOT-89

2214

2SCR586JFRGTLL

2SCR586JFRGTLL

ROHM Semiconductor

2SCR586JFRG IS A POWER TRANSISTO

611

2SD2118TLQ

2SD2118TLQ

ROHM Semiconductor

TRANS NPN 20V 5A SOT-428

0

2SD1898T100R

2SD1898T100R

ROHM Semiconductor

TRANS NPN 80V 1A SOT-89

10837

2SCR293P5T100

2SCR293P5T100

ROHM Semiconductor

NPN MIDDLE POWER DRIVER TRANSIST

1198

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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