Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BCX17T116

BCX17T116

ROHM Semiconductor

TRANS PNP 45V 0.5A SST3

0

2SCR553P5T100

2SCR553P5T100

ROHM Semiconductor

NPN 50V 2A MEDIUM POWER TRANSIST

3

2SAR554PT100

2SAR554PT100

ROHM Semiconductor

TRANS PNP 80V 1.5A MPT3

0

2SAR513RTL

2SAR513RTL

ROHM Semiconductor

TRANS PNP 50V 1A TSMT3

2473

2SB1189T100Q

2SB1189T100Q

ROHM Semiconductor

TRANS PNP 80V 0.7A SOT-89

0

2SC4081U3T106S

2SC4081U3T106S

ROHM Semiconductor

GENERAL PURPOSE SMALL SIGNAL AMP

0

2SA1576AT106S

2SA1576AT106S

ROHM Semiconductor

TRANS PNP 50V 0.15A SOT-323 TR

2797

2SC3837KT146P

2SC3837KT146P

ROHM Semiconductor

TRANS NPN 20V 0.05A SOT-346

15305

2SD2211T100Q

2SD2211T100Q

ROHM Semiconductor

TRANS NPN 160V 1.5A SOT89

0

2SCR293PFRAT100

2SCR293PFRAT100

ROHM Semiconductor

NPN DRIVER TRANSISTOR (CORRESPON

1863

2SCR543RTL

2SCR543RTL

ROHM Semiconductor

TRANS NPN 50V 3A TSMT3

438

2SD2656FRAT106

2SD2656FRAT106

ROHM Semiconductor

NPN LOW VCE(SAT) TRANSISTOR (COR

1523

SST6839T216

SST6839T216

ROHM Semiconductor

TRANS PNP 40V 0.2A SST3

0

2SC5658T2LR

2SC5658T2LR

ROHM Semiconductor

TRANS NPN 50V 0.15A VMT3

13

SST6838T216

SST6838T216

ROHM Semiconductor

TRANS NPN 40V 0.2A SST3

0

2SD1758TLR

2SD1758TLR

ROHM Semiconductor

TRANS NPN 32V 2A SOT-428

0

2SD2195T100

2SD2195T100

ROHM Semiconductor

TRANS NPN DARL 100V 2A SOT-89

0

2SA1774TLQ

2SA1774TLQ

ROHM Semiconductor

TRANS PNP 50V 0.15A SOT-416

3171

2SA1774EBTLS

2SA1774EBTLS

ROHM Semiconductor

TRANS PNP 50V 0.15A EMT3

0

QST3TR

QST3TR

ROHM Semiconductor

TRANS PNP 30V 5A TSMT6

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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