Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
UMT2907AT106

UMT2907AT106

ROHM Semiconductor

TRANS PNP 60V 0.6A SOT-323

920

2SD2153T100W

2SD2153T100W

ROHM Semiconductor

TRANS NPN 25V 2A MPT3

175

2SD1759TL

2SD1759TL

ROHM Semiconductor

TRANS NPN DARL 40V 2A SOT-428

0

2SCR572D3FRATL

2SCR572D3FRATL

ROHM Semiconductor

2SCR572D3FRA IS A POWER TRANSIST

997

2SAR375P5T100Q

2SAR375P5T100Q

ROHM Semiconductor

PNP -1.5A -120V MIDDLE POWER TRA

990

2SAR574D3FRATL

2SAR574D3FRATL

ROHM Semiconductor

PNP -2.0A -80V POWER TRANSISTOR

2425

2SAR375P5T100R

2SAR375P5T100R

ROHM Semiconductor

PNP -1.5A -120V MIDDLE POWER TRA

1000

2SCRC41CHZGT116R

2SCRC41CHZGT116R

ROHM Semiconductor

HIGH-VOLTAGE AMPLIFIER TRANSISTO

2988

2SAR572D3FRATL

2SAR572D3FRATL

ROHM Semiconductor

PNP -5.0A -30V POWER TRANSISTOR

2427

BC807-25T116

BC807-25T116

ROHM Semiconductor

TRANS PNP 45V 0.5A SMT3

0

2SCRC41CT116S

2SCRC41CT116S

ROHM Semiconductor

HIGH-VOLTAGE AMPLIFIER TRANSISTO

2949

2SC4102U3T106

2SC4102U3T106

ROHM Semiconductor

2SC4102U3 IS A TRANSISTOR FOR HI

6543

2SAR372P5T100Q

2SAR372P5T100Q

ROHM Semiconductor

PNP -0.7A -120V MIDDLE POWER TRA

1000

BC857BU3T106

BC857BU3T106

ROHM Semiconductor

PNP GENERAL PURPOSE TRANSISTOR.

2973

BC858BHZGT116

BC858BHZGT116

ROHM Semiconductor

PNP GENERAL PURPOSE TRANSISTOR -

2930

UM2222AU3T106

UM2222AU3T106

ROHM Semiconductor

NPN MEDIUM POWER TRANSISTOR (SWI

2767

MMSTA14T146

MMSTA14T146

ROHM Semiconductor

TRANS NPN 30V 0.5A

0

BC846BHZGT116

BC846BHZGT116

ROHM Semiconductor

NPN GENERAL PURPOSE TRANSISTOR (

2850

BCX19HZGT116

BCX19HZGT116

ROHM Semiconductor

NPN SMALL SIGNAL TRANSISTOR (AEC

2670

2SAR586D3FRATL

2SAR586D3FRATL

ROHM Semiconductor

PNP -5.0A -80V POWER TRANSISTOR

2486

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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