Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BCX6816H6327XTSA1

BCX6816H6327XTSA1

IR (Infineon Technologies)

BCX6816 - BCX68 - SMALL SIGNAL B

4000

BCV48H6327XTSA1

BCV48H6327XTSA1

IR (Infineon Technologies)

TRANSISTOR AF SOT89-3

0

BCX5216H6433XTMA1

BCX5216H6433XTMA1

IR (Infineon Technologies)

TRANSISTOR AF SOT89-4

0

IPI50R140CPXKSA1

IPI50R140CPXKSA1

IR (Infineon Technologies)

POWER FIELD-EFFECT TRANSISTOR

21374

BC848CWH6327XTSA1

BC848CWH6327XTSA1

IR (Infineon Technologies)

TRANS NPN 30V 100MA SOT323-3

198000

BCR158W

BCR158W

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

0

BCX5516H6327XTSA1

BCX5516H6327XTSA1

IR (Infineon Technologies)

TRANS NPN 60V 1A SOT89

0

BSP60

BSP60

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

45700

SMBT2907AE6327HTSA1

SMBT2907AE6327HTSA1

IR (Infineon Technologies)

TRANS PNP 60V 600MA SOT23-3

27117

BC847CWE6778

BC847CWE6778

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

0

BC817-16B5003

BC817-16B5003

IR (Infineon Technologies)

BIPOLAR TRANSISTOR TRANSISTOR

30000

MMBTA06LT1

MMBTA06LT1

IR (Infineon Technologies)

TRANSISTOR NPN 80V 0.5A

21666

BC848B-E6327

BC848B-E6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

0

BCW60B

BCW60B

IR (Infineon Technologies)

TRANS NPN 32V 100MA SOT23-3

7000

BCP69E6327

BCP69E6327

IR (Infineon Technologies)

POWER BIPOLAR TRANSISTOR

6693

BSP52E6327HTSA1

BSP52E6327HTSA1

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

5547

BCX53-16E6433

BCX53-16E6433

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

410000

BCR523UE6327

BCR523UE6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

1550

BDP953H6327XTSA1

BDP953H6327XTSA1

IR (Infineon Technologies)

TRANS NPN 100V 3A SOT223

0

BC858BE6327

BC858BE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

136603

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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