Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BCW67BE6327HTSA1

BCW67BE6327HTSA1

IR (Infineon Technologies)

TRANS PNP 32V 800MA SOT23-3

425000

BSP60H6327XTSA1

BSP60H6327XTSA1

IR (Infineon Technologies)

TRANS PNP 45V 1A SOT223-4

7000

BCR169S

BCR169S

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

0

BCX41E6433HTMA1

BCX41E6433HTMA1

IR (Infineon Technologies)

TRANS NPN 125V 0.8A SOT-23

0

BCX5116E6327HTSA1

BCX5116E6327HTSA1

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

13000

BCW60FFE6327

BCW60FFE6327

IR (Infineon Technologies)

BCW60 - LOW NOISE TRANSISTOR

294000

BC858AE6327HTSA1

BC858AE6327HTSA1

IR (Infineon Technologies)

TRANS PNP 30V 100MA SOT23-3

111000

BC847BE6433

BC847BE6433

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

264790

BCP49E6419

BCP49E6419

IR (Infineon Technologies)

BIPOLAR DARLINGTON TRANSISTOR

0

BSP61H6327XTSA1

BSP61H6327XTSA1

IR (Infineon Technologies)

TRANS PNP 60V 1A SOT223-4

5000

BC817-16B5000

BC817-16B5000

IR (Infineon Technologies)

BIPOLAR TRANSISTOR TRANSISTOR

180000

BC858BWH6327

BC858BWH6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

15000

BC817K-25WH6327

BC817K-25WH6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

45000

BC858CE6327

BC858CE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

43144

BC817-40E6433

BC817-40E6433

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

0

SMBT3904B5000

SMBT3904B5000

IR (Infineon Technologies)

FAST SWITCHING BIPOLAR TRANSISTO

900000

BC858CE6433HTMA1

BC858CE6433HTMA1

IR (Infineon Technologies)

TRANS PNP 30V 100MA SOT23-3

20000

BCV26E327

BCV26E327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

3000

BDP948E6433

BDP948E6433

IR (Infineon Technologies)

GENERAL PURPOSE TRANSISTOR

0

SMBT3906E6327HTSA1

SMBT3906E6327HTSA1

IR (Infineon Technologies)

TRANS PNP 40V 200MA SOT23-3

14095

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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