Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
IPI90N06S404AKSA2

IPI90N06S404AKSA2

IR (Infineon Technologies)

PFET, 90A I(D), 60V, 0.004OHM, 1

25000

BC858CE6327HTSA1

BC858CE6327HTSA1

IR (Infineon Technologies)

TRANS PNP 30V 100MA SOT23-3

186000

BCW61AE6327HTSA1

BCW61AE6327HTSA1

IR (Infineon Technologies)

TRANS PNP 32V 100MA SOT23-3

0

SGP02N120XKSA1106

SGP02N120XKSA1106

IR (Infineon Technologies)

IGBT 6.2A, 1200V, N CHANNEL

495

BCW60FFE6327HTSA1

BCW60FFE6327HTSA1

IR (Infineon Technologies)

TRANS NPN 32V 100MA SOT23-3

0

BFN18H6327XTSA1

BFN18H6327XTSA1

IR (Infineon Technologies)

TRANSISTOR AF SOT89-4

0

BCX6916E6327HTSA1

BCX6916E6327HTSA1

IR (Infineon Technologies)

TRANS PNP 20V 1A SOT89

0

BCR141WH6327

BCR141WH6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

0

BC849CW

BC849CW

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

98902

BC847BL3E6327XTMA1

BC847BL3E6327XTMA1

IR (Infineon Technologies)

TRANS NPN 45V 0.1A TSLP-3-1

0

BCP5616H6327XTSA1

BCP5616H6327XTSA1

IR (Infineon Technologies)

POWER BIPOLAR TRANSISTOR

16000

BCP5516H6327XTSA1

BCP5516H6327XTSA1

IR (Infineon Technologies)

TRANS NPN 60V 1A SOT223

0

SMBTA92E6327

SMBTA92E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

72000

BCX69-25E6327HTSA1

BCX69-25E6327HTSA1

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

5000

BCR166W

BCR166W

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

8893

BCR141W

BCR141W

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

9000

BCP55E6327

BCP55E6327

IR (Infineon Technologies)

POWER BIPOLAR TRANSISTOR

31000

BC857AE6327

BC857AE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

36000

MMBTA06LT1HTSA1

MMBTA06LT1HTSA1

IR (Infineon Technologies)

TRANSISTOR NPN 80V 0.5A

411000

BCP49

BCP49

IR (Infineon Technologies)

BIPOLAR DARLINGTON TRANSISTOR

31000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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