Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BCW67CE6327HTSA1

BCW67CE6327HTSA1

IR (Infineon Technologies)

TRANS PNP 32V 800MA SOT23-3

0

IHW40N60R

IHW40N60R

IR (Infineon Technologies)

IGBT, 80A, 600V, N-CHANNEL

15622

BDP948E6327HTSA1

BDP948E6327HTSA1

IR (Infineon Technologies)

TRANS PNP 45V 3A SOT223-4

650

MMBTA56LT1

MMBTA56LT1

IR (Infineon Technologies)

TRANS PNP 80V 500MA SOT23-3

15000

BC850CWE6327

BC850CWE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

0

BCX51-16E6327

BCX51-16E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

3609

IPP80N06S405AKSA2

IPP80N06S405AKSA2

IR (Infineon Technologies)

PFET, 80A I(D), 60V, 0.0057OHM,

14500

BCX70JE6433

BCX70JE6433

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

10000

BCR191WE6327

BCR191WE6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

58000

BCP51-10

BCP51-10

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

6464

BC817K-16E6327

BC817K-16E6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

15000

BC848CE6433HTMA1

BC848CE6433HTMA1

IR (Infineon Technologies)

TRANS NPN 30V 0.1A SOT-23

0

BCW66KGE6327HTSA1

BCW66KGE6327HTSA1

IR (Infineon Technologies)

TRANS NPN 45V 0.8A SOT-23

0

BC817K16E6327HTSA1

BC817K16E6327HTSA1

IR (Infineon Technologies)

TRANS NPN 45V 0.5A SOT-23

2379

BCW66KHE6327HTSA1

BCW66KHE6327HTSA1

IR (Infineon Technologies)

TRANS NPN 45V 0.8A SOT-23

8455

BSP 52 E6327

BSP 52 E6327

IR (Infineon Technologies)

TRANS NPN DARL 80V 1A SOT-223

3

BCP49E6327HTSA1

BCP49E6327HTSA1

IR (Infineon Technologies)

TRANS NPN 60V 500MA SOT223-4

0

BC818K-25

BC818K-25

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

27000

BCX42E6433HTMA1

BCX42E6433HTMA1

IR (Infineon Technologies)

TRANS PNP 125V 0.8A SOT-23

0

BCX71GE6327

BCX71GE6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

60000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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