Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC847B-E6327

BC847B-E6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

36000

IKP15N65H5XKSA1718

IKP15N65H5XKSA1718

IR (Infineon Technologies)

INSULATED GATE BIPOLAR TRANSISTO

330

BCX5316H6327XTSA1

BCX5316H6327XTSA1

IR (Infineon Technologies)

TRANSISTOR AF SOT89-4

0

BC860BE6327HTSA1

BC860BE6327HTSA1

IR (Infineon Technologies)

TRANS PNP 45V 100MA SOT23-3

285000

BC807-40E6359

BC807-40E6359

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

40000

BC857CB5000

BC857CB5000

IR (Infineon Technologies)

BIPOLAR TRANSISTOR TRANSISTOR

540000

BCR191WH6327

BCR191WH6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

9000

BCX68-16

BCX68-16

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

3000

BC817K40E6433HTMA1

BC817K40E6433HTMA1

IR (Infineon Technologies)

TRANS NPN 45V 500MA SOT23-3

16157

BCP5310H6327XTSA1

BCP5310H6327XTSA1

IR (Infineon Technologies)

TRANS PNP 80V 1A SOT223

0

SMBTA06

SMBTA06

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

6000

BCX51H6327XTSA1

BCX51H6327XTSA1

IR (Infineon Technologies)

TRANS PNP 45V 1A SOT89

58493

BCX68-16E6327

BCX68-16E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

2000

BCP69-25E6327

BCP69-25E6327

IR (Infineon Technologies)

POWER BIPOLAR TRANSISTOR

3000

BC80716E6327

BC80716E6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

432000

SMBTA14E6327HTSA1872

SMBTA14E6327HTSA1872

IR (Infineon Technologies)

TRANSISTOR DARLINGTON NPN 30V

5000

BC817K25WH6327XTSA1

BC817K25WH6327XTSA1

IR (Infineon Technologies)

TRANS NPN 45V 500MA SOT323-3

45000

BFN39E6327

BFN39E6327

IR (Infineon Technologies)

HIGH VOLTAGE BIPOLAR TRANSISTOR

9000

BCR129WH6327

BCR129WH6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

268000

BDP948H6327XTSA1

BDP948H6327XTSA1

IR (Infineon Technologies)

TRANS PNP 45V 3A SOT223

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top