Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
MMBT3904LT1

MMBT3904LT1

IR (Infineon Technologies)

TRANS NPN 40V 200MA SOT23-3

0

BCR119WH6327

BCR119WH6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

108000

BCX71JE6327

BCX71JE6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

54500

BCR192WH6327

BCR192WH6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

35965

BCR133WH6327

BCR133WH6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

65595

BCP52-16

BCP52-16

IR (Infineon Technologies)

TRANS PNP 60V 1A SOT223

0

BCP5416E6327HTSA1

BCP5416E6327HTSA1

IR (Infineon Technologies)

POWER BIPOLAR TRANSISTOR

4000

BCW61A

BCW61A

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

9000

MMBT3904LT1HTSA1

MMBT3904LT1HTSA1

IR (Infineon Technologies)

TRANS NPN 40V 200MA SOT23-3

44603

BSS79C

BSS79C

IR (Infineon Technologies)

TRANS NPN 40V 800MA SOT23-3

110749

BC848AE6327

BC848AE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

78000

BCX55-16E6327

BCX55-16E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

15635

BCX70K

BCX70K

IR (Infineon Technologies)

TRANS NPN 45V 200MA SOT23-3

3230

BCV27E6327HTSA1

BCV27E6327HTSA1

IR (Infineon Technologies)

TRANS NPN DARL 30V 0.5A SOT-23

0

BCW61CE6327HTSA1

BCW61CE6327HTSA1

IR (Infineon Technologies)

TRANS PNP 32V 100MA SOT23-3

6622

BC848AE6327HTSA1

BC848AE6327HTSA1

IR (Infineon Technologies)

TRANS NPN 30V 100MA SOT23-3

354000

BC848CE6327HTSA1

BC848CE6327HTSA1

IR (Infineon Technologies)

TRANS NPN 30V 100MA SOT23-3

69950

BC848BE6327

BC848BE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

100505

BCR555

BCR555

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

305000

BSP50E6327

BSP50E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

1000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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