Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC857CE6327HTSA1

BC857CE6327HTSA1

IR (Infineon Technologies)

TRANS PNP 45V 100MA SOT23-3

49369

BCX71HE6327

BCX71HE6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

1275000

BCP51H6327XTSA1

BCP51H6327XTSA1

IR (Infineon Technologies)

TRANS PNP 45V 1A SOT223

0

BCX70JE6433HTMA1

BCX70JE6433HTMA1

IR (Infineon Technologies)

TRANS NPN 45V 100MA SOT23-3

60000

BC858BWE6327

BC858BWE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

66000

MMBTA14LT1HTSA1

MMBTA14LT1HTSA1

IR (Infineon Technologies)

TRANSISTOR NPN DARL 30V 0.3A

53750

BCW68GE6327HTSA1

BCW68GE6327HTSA1

IR (Infineon Technologies)

TRANS PNP 45V 0.8A SOT-23

0

BCP49H6327XTSA1

BCP49H6327XTSA1

IR (Infineon Technologies)

TRANS NPN DARL 60V 0.5A SOT223

0

BCX42E6327HTSA1

BCX42E6327HTSA1

IR (Infineon Technologies)

TRANS PNP 125V 0.8A SOT-23

1472

BC858CWH6327XTSA1

BC858CWH6327XTSA1

IR (Infineon Technologies)

TRANS PNP 30V 100MA SOT323-3

63000

BCP54-16E6433

BCP54-16E6433

IR (Infineon Technologies)

POWER BIPOLAR TRANSISTOR

4000

BC808-40E6327

BC808-40E6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

6000

BFN24E6327

BFN24E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

17470

BCV46E6327HTSA1

BCV46E6327HTSA1

IR (Infineon Technologies)

TRANS PNP DARL 60V 0.5A SOT-23

0

BCP49H6359XTMA1

BCP49H6359XTMA1

IR (Infineon Technologies)

TRANS NPN 60V 500MA SOT223-4

48000

BCM856SH6778

BCM856SH6778

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

3000

BCR162E6327

BCR162E6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

6000

SMBT3904E6433HTMA1

SMBT3904E6433HTMA1

IR (Infineon Technologies)

TRANS NPN 40V 200MA SOT23-3

10000

BCX55H6327XTSA1

BCX55H6327XTSA1

IR (Infineon Technologies)

TRANSISTOR NPN SOT89

0

BCX70GE6327

BCX70GE6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

243000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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