Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BCW60DE6327HTSA1

BCW60DE6327HTSA1

IR (Infineon Technologies)

TRANS NPN 32V 0.1A SOT-23

0

BC846AE6327

BC846AE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

357000

BCX52H6327XTSA1

BCX52H6327XTSA1

IR (Infineon Technologies)

TRANSISTOR

26000

BCW65C

BCW65C

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

6000

BC-848-B

BC-848-B

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

36000

SPA11N60C3

SPA11N60C3

IR (Infineon Technologies)

POWER FIELD-EFFECT TRANSISTOR, 1

0

BCX6910H6327XTSA1

BCX6910H6327XTSA1

IR (Infineon Technologies)

TRANS PNP 20V 1A SOT89

26000

BCP54-16E6327

BCP54-16E6327

IR (Infineon Technologies)

POWER BIPOLAR TRANSISTOR

8000

BCX71JE6433HTMA1

BCX71JE6433HTMA1

IR (Infineon Technologies)

TRANS PNP 45V 100MA SOT23-3

571000

BCW68FE6327HTSA1

BCW68FE6327HTSA1

IR (Infineon Technologies)

TRANS PNP 45V 0.8A SOT-23

0

BCX71HE6327HTSA1

BCX71HE6327HTSA1

IR (Infineon Technologies)

TRANS PNP 45V 100MA SOT23-3

807000

BCW61AE6327

BCW61AE6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

54000

BC846BB5000

BC846BB5000

IR (Infineon Technologies)

BIPOLAR TRANSISTOR TRANSISTOR

100000

BSS80C

BSS80C

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BCX6825H6327XTSA1

BCX6825H6327XTSA1

IR (Infineon Technologies)

TRANSISTOR AF SOT89-4

0

IPP50N12S3LAKSA1

IPP50N12S3LAKSA1

IR (Infineon Technologies)

OPTIMOS POWER-TRANSISTOR

500

BCP51-16E6327

BCP51-16E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

5000

BC858BW

BC858BW

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

0

BCW68GE6327

BCW68GE6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

4083

BCX6910E6327HTSA1

BCX6910E6327HTSA1

IR (Infineon Technologies)

TRANS PNP 20V 1A SOT89

23000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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