Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC807-16WE6327

BC807-16WE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

72000

BC847CWH6327

BC847CWH6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

102000

BCX54E6327

BCX54E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

85000

BCW68HE6327HTSA1

BCW68HE6327HTSA1

IR (Infineon Technologies)

TRANS PNP 45V 800MA SOT23-3

3453

BCX5616H6433XTMA1

BCX5616H6433XTMA1

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

8000

BCW66KFE6327HTSA1

BCW66KFE6327HTSA1

IR (Infineon Technologies)

TRANS NPN 45V 0.8A SOT-23

0

BCR119S

BCR119S

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

5990

BCR555E6433

BCR555E6433

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

500000

SMBTA06E6327HTSA1

SMBTA06E6327HTSA1

IR (Infineon Technologies)

TRANS NPN 80V 0.5A SOT-23

0

BCX5516H6433XTMA1

BCX5516H6433XTMA1

IR (Infineon Technologies)

TRANSISTOR AF SOT89-4

0

BCX51E6327HTSA1

BCX51E6327HTSA1

IR (Infineon Technologies)

TRANS PNP 45V 1A SOT89

3500

BC846AE6433

BC846AE6433

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

330000

BCX6925H6327XTSA1

BCX6925H6327XTSA1

IR (Infineon Technologies)

TRANS PNP 20V 1A SOT89

73000

BC847C-B5000

BC847C-B5000

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

20000

BCR141SE6327

BCR141SE6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

62950

BCX5310E6327

BCX5310E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

19000

BC848BE6327HTSA1

BC848BE6327HTSA1

IR (Infineon Technologies)

TRANS NPN 30V 100MA SOT23-3

477000

BCW60BE6327

BCW60BE6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

71000

BFN26E6327

BFN26E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

3500

BCX6810E6327HTSA1

BCX6810E6327HTSA1

IR (Infineon Technologies)

TRANS NPN 20V 1A SOT89

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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