Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
SMBTA56E6433HTMA1

SMBTA56E6433HTMA1

IR (Infineon Technologies)

TRANS PNP 80V 500MA SOT23-3

220000

BC807-25B5000

BC807-25B5000

IR (Infineon Technologies)

BIPOLAR TRANSISTOR TRANSISTOR

1440000

BC850BWH6327XTSA1

BC850BWH6327XTSA1

IR (Infineon Technologies)

TRANS NPN 45V 0.1A SOT323

0

BCR183S

BCR183S

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

197800

BCV47E6327HTSA1

BCV47E6327HTSA1

IR (Infineon Technologies)

TRANS NPN DARL 60V 0.5A SOT-23

25

BCX41E6327HTSA1

BCX41E6327HTSA1

IR (Infineon Technologies)

TRANS NPN 125V 0.8A SOT-23

17218

IPP60R380P6

IPP60R380P6

IR (Infineon Technologies)

POWER FIELD-EFFECT TRANSISTOR

37000

SMBT3906SH6327

SMBT3906SH6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

30000

BC858BE6327HTSA1

BC858BE6327HTSA1

IR (Infineon Technologies)

TRANS PNP 30V 100MA SOT23-3

135000

BSP62H6327XTSA1

BSP62H6327XTSA1

IR (Infineon Technologies)

TRANS PNP DARL 80V 1A SOT223

0

BCW60FE6327

BCW60FE6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BC807-40E6327

BC807-40E6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

507300

BCV26E6327HTSA1

BCV26E6327HTSA1

IR (Infineon Technologies)

TRANS PNP 30V 500MA SOT23-3

72000

BCR108WH6433

BCR108WH6433

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

40000

BCR196E6327

BCR196E6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

60000

BC847BWH6433XTMA1

BC847BWH6433XTMA1

IR (Infineon Technologies)

TRANS NPN 45V 100MA SOT323-3

130000

BCV27E6327

BCV27E6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

186602

BC817-40B5000

BC817-40B5000

IR (Infineon Technologies)

BIPOLAR TRANSISTOR TRANSISTOR

360000

BC817K-16

BC817K-16

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

12978

BC849CE6327

BC849CE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

155280

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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