Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BCP5416E6433HTMA1

BCP5416E6433HTMA1

IR (Infineon Technologies)

TRANS NPN 45V 1A SOT223-4

44000

BC856BE6327

BC856BE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

11960

BCR146

BCR146

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

28983

PZTA92E6433HTMA1

PZTA92E6433HTMA1

IR (Infineon Technologies)

PZTA92 - PNP HIGH VOLTAGE TRANSI

8000

BDP954H6327XTSA1

BDP954H6327XTSA1

IR (Infineon Technologies)

TRANS PNP 100V 3A SOT223

0

BFN26E6327HTSA1

BFN26E6327HTSA1

IR (Infineon Technologies)

TRANS NPN 300V 0.2A SOT-23

0

BC847BWH6327XTSA1

BC847BWH6327XTSA1

IR (Infineon Technologies)

TRANS NPN 45V 100MA SOT323-3

36000

BCR48PNH6327

BCR48PNH6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

17900

BCR158WH6327

BCR158WH6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

33000

BC847AE6327HTSA1

BC847AE6327HTSA1

IR (Infineon Technologies)

TRANS NPN 45V 100MA SOT23-3

37467

BCP5416H6433XTMA1

BCP5416H6433XTMA1

IR (Infineon Technologies)

POWER BIPOLAR TRANSISTOR

224000

SGD02N60

SGD02N60

IR (Infineon Technologies)

IGBT, 6A, 600V, N-CHANNEL

2500

BCX70KE6327HTSA1

BCX70KE6327HTSA1

IR (Infineon Technologies)

TRANS NPN 45V 0.1A SOT-23

14293

BC850CE6327HTSA1

BC850CE6327HTSA1

IR (Infineon Technologies)

TRANS NPN 45V 100MA SOT23-3

87000

BFN38E6327HTSA1

BFN38E6327HTSA1

IR (Infineon Technologies)

TRANS NPN 300V 200MA SOT223-4

54000

BC807-25WE6327

BC807-25WE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

372000

BC808-40W

BC808-40W

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

0

BC848BWH6327XTSA1

BC848BWH6327XTSA1

IR (Infineon Technologies)

TRANS NPN 30V 100MA SOT323-3

108000

BC807-16

BC807-16

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

26000

BC859CE6327HTSA1

BC859CE6327HTSA1

IR (Infineon Technologies)

TRANS PNP 30V 100MA SOT23-3

17269

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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