Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
FS225R12KE4

FS225R12KE4

IR (Infineon Technologies)

IGBT MODULE

156

FF150R12KE3B8BDLA1

FF150R12KE3B8BDLA1

IR (Infineon Technologies)

IGBT MODULE

40

BCX 70J E6327

BCX 70J E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

48000

BC857B E6327

BC857B E6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

537000

BF517E6327

BF517E6327

IR (Infineon Technologies)

RF 0.025, NPN

36000

BCP54E6327HTSA1

BCP54E6327HTSA1

IR (Infineon Technologies)

TRANS NPN 45V 1A SOT-223

0

BC850CE6359HTMA1

BC850CE6359HTMA1

IR (Infineon Technologies)

TRANS PREBIAS PNP SOT23

0

BC 817-25 E6433

BC 817-25 E6433

IR (Infineon Technologies)

TRANS NPN 45V 0.5A SOT-23

0

BC 807-16W H6327

BC 807-16W H6327

IR (Infineon Technologies)

TRANS PNP 45V 0.5A SOT323

0

BCW 67A E6327

BCW 67A E6327

IR (Infineon Technologies)

TRANS PNP 32V 0.8A SOT-23

0

BCP 69US E6327

BCP 69US E6327

IR (Infineon Technologies)

TRANS PNP 20V 1A TSOP6-6

0

BC 817-25W E6327

BC 817-25W E6327

IR (Infineon Technologies)

TRANS NPN 45V 0.5A SOT-323

0

BCW 66KG E6433

BCW 66KG E6433

IR (Infineon Technologies)

TRANS NPN 45V 0.8A SOT-23

0

SMBT 3906 E6767

SMBT 3906 E6767

IR (Infineon Technologies)

TRANS PNP 40V 0.2A SOT-23

0

BDP953E6327HTSA1

BDP953E6327HTSA1

IR (Infineon Technologies)

TRANS NPN 100V 3A SOT-223

0

BCX5410E6327

BCX5410E6327

IR (Infineon Technologies)

TRANS NPN 45V 1A SOT-89

0

BC 847BF E6327

BC 847BF E6327

IR (Infineon Technologies)

TRANS NPN 45V 0.1A TSFP-3

0

BSP62E6327HTSA1

BSP62E6327HTSA1

IR (Infineon Technologies)

TRANS PNP DARL 80V 1A SOT-223

0

BC 856B E6433

BC 856B E6433

IR (Infineon Technologies)

TRANS PNP 65V 0.1A SOT-23

0

BFN26E6433HTMA1

BFN26E6433HTMA1

IR (Infineon Technologies)

TRANS NPN 300V 0.2A SOT-23

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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