Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PZTA14E6327HTSA1

PZTA14E6327HTSA1

IR (Infineon Technologies)

TRANS NPN DARL 30V 0.3A SOT-223

0

BC 818-25 E6327

BC 818-25 E6327

IR (Infineon Technologies)

TRANS NPN 25V 0.5A SOT-23

0

BC 808-40W E6327

BC 808-40W E6327

IR (Infineon Technologies)

TRANS PNP 25V 0.5A SOT-323

0

BCW66KHB6327HTLA1

BCW66KHB6327HTLA1

IR (Infineon Technologies)

TRANS NPN 45V 0.8A SOT-23

0

BDP947E6327HTSA1

BDP947E6327HTSA1

IR (Infineon Technologies)

TRANS NPN 45V 3A SOT-223

0

BC 846BW H6327

BC 846BW H6327

IR (Infineon Technologies)

TRANS NPN 65V 0.1A SOT323

0

BC857CWE6327BTSA1

BC857CWE6327BTSA1

IR (Infineon Technologies)

TRANS PNP 45V 0.1A SOT-323

0

BCP 56-10 H6433

BCP 56-10 H6433

IR (Infineon Technologies)

TRANS NPN 80V 1A SOT223

0

SMBTA 92 E6433

SMBTA 92 E6433

IR (Infineon Technologies)

TRANS PNP 300V 0.5A SOT-23

0

BC 856A E6327

BC 856A E6327

IR (Infineon Technologies)

TRANS PNP 65V 0.1A SOT-23

0

BCW66KE6359HTMA1

BCW66KE6359HTMA1

IR (Infineon Technologies)

TRANSISTOR AF SOT23

0

BC 847B B5003

BC 847B B5003

IR (Infineon Technologies)

TRANS NPN 45V 0.1A SOT-23

0

BC847BWE6433HTMA1

BC847BWE6433HTMA1

IR (Infineon Technologies)

TRANS NPN 45V 0.1A SOT-323

0

BCX 56-10 E6327

BCX 56-10 E6327

IR (Infineon Technologies)

TRANS NPN 80V 1A SOT-89

0

BCX6825E6327HTSA1

BCX6825E6327HTSA1

IR (Infineon Technologies)

TRANS NPN 20V 1A SOT-89

0

BC 817K-25W E6433

BC 817K-25W E6433

IR (Infineon Technologies)

TRANS NPN 45V 0.5A SOT-323

0

BCW 66F E6327

BCW 66F E6327

IR (Infineon Technologies)

TRANS NPN 45V 0.8A SOT-23

0

BC 846B B5003

BC 846B B5003

IR (Infineon Technologies)

TRANS NPN 65V 0.1A SOT-23

0

BCP 54-16 E6327

BCP 54-16 E6327

IR (Infineon Technologies)

TRANS NPN 45V 1A SOT-223

0

BC 807-40W H6433

BC 807-40W H6433

IR (Infineon Technologies)

TRANS PNP 45V 0.5A SOT323

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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