Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BFN 24 E6327

BFN 24 E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

3000

BC 858C E6327

BC 858C E6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

9000

BCR183E6433

BCR183E6433

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

0

BC856S E6327

BC856S E6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

0

BC846E6359

BC846E6359

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

10000

IGB03N120H2ATMA1616

IGB03N120H2ATMA1616

IR (Infineon Technologies)

POWER BIPOLAR TRANSISTOR

0

FT150R12KE3B5BDLA1

FT150R12KE3B5BDLA1

IR (Infineon Technologies)

IGBT MODULE

433

FZ1000R16KF4NOSA1

FZ1000R16KF4NOSA1

IR (Infineon Technologies)

IGBT MODULE

0

FS100R12KT4PB15BPSA1

FS100R12KT4PB15BPSA1

IR (Infineon Technologies)

IGBT MODULE

218

BCP72M

BCP72M

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

24000

BSM300GA170DN2SE325HOSA1

BSM300GA170DN2SE325HOSA1

IR (Infineon Technologies)

IGBT MODULE

0

BC 860B E6327

BC 860B E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

30000

BCP49H6419

BCP49H6419

IR (Infineon Technologies)

BIPOLAR DARLINGTON TRANSISTOR

16000

FZ2400R12HE4B9HDSA2

FZ2400R12HE4B9HDSA2

IR (Infineon Technologies)

IGBT MODULE

34

BCX52E6237

BCX52E6237

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

2000

FF401R17KF6CB2NOSA1

FF401R17KF6CB2NOSA1

IR (Infineon Technologies)

IGBT MODULE

0

196WH6327

196WH6327

IR (Infineon Technologies)

BCR196 - DIGITAL TRANSISTOR

0

BCW 60C E6327

BCW 60C E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

30000

BCW 61C E6327

BCW 61C E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

30000

BC80725E6327HTSA1

BC80725E6327HTSA1

IR (Infineon Technologies)

BIPOLAR GENERAL PURPOSE TRANSIST

54000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top