Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
SMBTA56E6327HTSA1

SMBTA56E6327HTSA1

IR (Infineon Technologies)

TRANS PNP 80V 500MA SOT23-3

234000

BCW60CE6327HTSA1

BCW60CE6327HTSA1

IR (Infineon Technologies)

TRANS NPN 32V 0.1A SOT-23

0

BC849BE6327HTSA1

BC849BE6327HTSA1

IR (Infineon Technologies)

TRANS NPN 30V 100MA SOT23-3

23990

PZTA14H6327XTSA1

PZTA14H6327XTSA1

IR (Infineon Technologies)

TRANS NPN 30V 300MA SOT223-4

134000

BC847BE6433HTMA1

BC847BE6433HTMA1

IR (Infineon Technologies)

TRANS NPN 45V 0.1A SOT-23

0

BCW61BE6327HTSA1

BCW61BE6327HTSA1

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

201000

BC808-40WE6327

BC808-40WE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

30000

BCX71H

BCX71H

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

23990

BC858CWH6327

BC858CWH6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

39000

BFN38E6327

BFN38E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

10000

BC860BWE6327

BC860BWE6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

129000

BCR185SE6327

BCR185SE6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

9000

BFN24E6327HTSA1

BFN24E6327HTSA1

IR (Infineon Technologies)

TRANS NPN 250V 200MA SOT23-3

0

BC860CWE6327

BC860CWE6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

122900

BC80725E6327

BC80725E6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

843000

BCX55-10E6327

BCX55-10E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

10000

SMBT3904UPNE3627

SMBT3904UPNE3627

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

6000

BCW60DE6327

BCW60DE6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

98852

BC846UE6327

BC846UE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

101760

SMBT3904E6327HTSA1

SMBT3904E6327HTSA1

IR (Infineon Technologies)

TRANS NPN 40V 200MA SOT23-3

43549

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top