Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC847BE6327HTSA1

BC847BE6327HTSA1

IR (Infineon Technologies)

TRANS NPN 45V 100MA SOT23-3

2718

BC847BWH6327

BC847BWH6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

0

BFP490E6327

BFP490E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

4700

BCX 70H E6327

BCX 70H E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

21000

FS400R07A1E3

FS400R07A1E3

IR (Infineon Technologies)

IGBT MODULE

1

BCR39PN-E6327

BCR39PN-E6327

IR (Infineon Technologies)

TRANSISTOR DIGITAL BJT NPN/PNP

6000

BCR146T E6327

BCR146T E6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

24000

IPI60R099CP

IPI60R099CP

IR (Infineon Technologies)

PFET, 31A I(D), 600V, 0.099OHM,

0

BC 848B E6327

BC 848B E6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

30000

BCW 60D E6327

BCW 60D E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

30000

BCX 71H E6327

BCX 71H E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

30000

BC856S E6433

BC856S E6433

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

0

BC 858CE6327

BC 858CE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

30000

BCW 60FF E6327

BCW 60FF E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

45000

SMBT 3904 E6433

SMBT 3904 E6433

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

20000

BCW61E6384HTMA1

BCW61E6384HTMA1

IR (Infineon Technologies)

BCW61 - SMALL SIGNAL BIPOLAR TRA

470000

BC 847C E6433

BC 847C E6433

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

30000

BCW 61D E6327

BCW 61D E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

30000

BC 858A E6327

BC 858A E6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

30000

BC 850B E6327

BC 850B E6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

36000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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