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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC 808-40 B6327

BC 808-40 B6327

IR (Infineon Technologies)

TRANS PNP 25V 0.5A SOT-23

0
SMBT 3904 B5003

SMBT 3904 B5003

IR (Infineon Technologies)

TRANS NPN 40V 0.2A SOT-23

0
BC 807-16 E6433

BC 807-16 E6433

IR (Infineon Technologies)

TRANS PNP 45V 0.5A SOT-23

0
BCP5216E6327HTSA1

BCP5216E6327HTSA1

IR (Infineon Technologies)

TRANS PNP 60V 1A SOT-223

0
BC 807-16W E6327

BC 807-16W E6327

IR (Infineon Technologies)

TRANS PNP 45V 0.5A SOT-323

0
BC 807-25W H6327

BC 807-25W H6327

IR (Infineon Technologies)

TRANS PNP 45V 0.5A SOT323

0
BC 807-40W H6327

BC 807-40W H6327

IR (Infineon Technologies)

TRANS PNP 45V 0.5A SOT323

0
BCV29E6327HTSA1

BCV29E6327HTSA1

IR (Infineon Technologies)

TRANS NPN DARL 30V 0.5A SOT-89

0
BCV48E6327HTSA1

BCV48E6327HTSA1

IR (Infineon Technologies)

TRANS PNP DARL 60V 0.5A SOT-89

0
MMBT3904LT3XT

MMBT3904LT3XT

IR (Infineon Technologies)

TRANS NPN 40V 0.2A SOT-23

0
BCX5216E6433HTMA1

BCX5216E6433HTMA1

IR (Infineon Technologies)

TRANS PNP 60V 1A SOT-89

0
BCX5316E6433HTMA1

BCX5316E6433HTMA1

IR (Infineon Technologies)

TRANS PNP 80V 1A SOT-89

0
BCP51E6327HTSA1

BCP51E6327HTSA1

IR (Infineon Technologies)

TRANS PNP 45V 1A SOT-223

0
BC847BWE6327BTSA1

BC847BWE6327BTSA1

IR (Infineon Technologies)

TRANS NPN 45V 0.1A SOT-323

0
BCP 54-16 H6779

BCP 54-16 H6779

IR (Infineon Technologies)

TRANS NPN 45V 1A SOT223

0
BC 846A E6433

BC 846A E6433

IR (Infineon Technologies)

TRANS NPN 65V 0.1A SOT-23

0
BC 857BF E6327

BC 857BF E6327

IR (Infineon Technologies)

TRANS PNP 45V 0.1A TSFP-3

0
BC 856BW H6327

BC 856BW H6327

IR (Infineon Technologies)

TRANS PNP 65V 0.1A SOT323

0
BC 817-40 B5003

BC 817-40 B5003

IR (Infineon Technologies)

TRANS NPN 45V 0.5A SOT-23

0
BC 857B B5003

BC 857B B5003

IR (Infineon Technologies)

TRANS PNP 45V 0.1A SOT-23

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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