Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC817K40E6359HTMA1

BC817K40E6359HTMA1

IR (Infineon Technologies)

TRANS NPN 45V SOT323-3

0

BC 850C B5003

BC 850C B5003

IR (Infineon Technologies)

TRANS NPN 45V 0.1A SOT-23

0

BC860BWE6327HTSA1

BC860BWE6327HTSA1

IR (Infineon Technologies)

TRANS PNP 45V 0.1A SOT-323

0

BCX5616E6327HTSA1

BCX5616E6327HTSA1

IR (Infineon Technologies)

TRANS NPN 80V 1A SOT-89

0

BC 807-25 B5003

BC 807-25 B5003

IR (Infineon Technologies)

TRANS PNP 45V 0.5A SOT-23

0

BCP5616E6327HTSA1

BCP5616E6327HTSA1

IR (Infineon Technologies)

TRANS NPN 80V 1A SOT-223

0

BC 807-40W E6433

BC 807-40W E6433

IR (Infineon Technologies)

TRANS PNP 45V 0.5A SOT-323

0

BC 808-40W H6327

BC 808-40W H6327

IR (Infineon Technologies)

TRANS PNP 25V 0.5A SOT323

0

BCV47E6393HTSA1

BCV47E6393HTSA1

IR (Infineon Technologies)

TRANSISTOR AF SOT23

0

BC846BWE6327HTSA1

BC846BWE6327HTSA1

IR (Infineon Technologies)

TRANS NPN 65V 0.1A SOT-323

0

BC857CB5003XT

BC857CB5003XT

IR (Infineon Technologies)

TRANS PNP 45V 0.1A SOT-23

0

BC 807-25 E6327

BC 807-25 E6327

IR (Infineon Technologies)

TRANS PNP 45V 0.5A SOT-23

0

BC80725WE6327BTSA1

BC80725WE6327BTSA1

IR (Infineon Technologies)

TRANS PNP 45V 0.5A SOT-323

0

BCX5516E6433HTMA1

BCX5516E6433HTMA1

IR (Infineon Technologies)

TRANS NPN 60V 1A SOT-89

0

BC 808-25 E6327

BC 808-25 E6327

IR (Infineon Technologies)

TRANS PNP 25V 0.5A SOT-23

0

BC 817-40 E6433

BC 817-40 E6433

IR (Infineon Technologies)

TRANS NPN 45V 0.5A SOT-23

0

BC 817-40 E6327

BC 817-40 E6327

IR (Infineon Technologies)

TRANS NPN 45V 0.5A SOT-23

0

BC 856BW H6433

BC 856BW H6433

IR (Infineon Technologies)

TRANS PNP 65V 0.1A SOT323

0

BCP5116E6327HTSA1

BCP5116E6327HTSA1

IR (Infineon Technologies)

TRANS PNP 45V 1A SOT-223

0

BCP 56-10 E6433

BCP 56-10 E6433

IR (Infineon Technologies)

TRANS NPN 80V 1A SOT-223

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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