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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BDP949E6327HTSA1

BDP949E6327HTSA1

IR (Infineon Technologies)

TRANS NPN 60V 3A SOT-223

0
BC 856BW E6433

BC 856BW E6433

IR (Infineon Technologies)

TRANS PNP 65V 0.1A SOT-323

0
BC 848C B6327

BC 848C B6327

IR (Infineon Technologies)

TRANS NPN 30V 0.1A SOT-23

0
BCP5310E6327HTSA1

BCP5310E6327HTSA1

IR (Infineon Technologies)

TRANS PNP 80V 1A SOT-223

0
BCX56H6359XTMA1

BCX56H6359XTMA1

IR (Infineon Technologies)

TRANSISTOR NPN SOT89

0
BC847CWE6433HTMA1

BC847CWE6433HTMA1

IR (Infineon Technologies)

TRANS NPN 45V 0.1A SOT-323

0
SMBTA 42 E6433

SMBTA 42 E6433

IR (Infineon Technologies)

TRANS NPN 300V 0.5A SOT-23

0
BSP 51 E6327

BSP 51 E6327

IR (Infineon Technologies)

TRANS NPN DARL 60V 1A SOT-223

0
BDP950E6327HTSA1

BDP950E6327HTSA1

IR (Infineon Technologies)

TRANS PNP 60V 3A SOT-223

0
BC 847C B5003

BC 847C B5003

IR (Infineon Technologies)

TRANS NPN 45V 0.1A SOT-23

0
BC 818K-25 E6327

BC 818K-25 E6327

IR (Infineon Technologies)

TRANS NPN 25V 0.5A SOT-23

0
BCP 51-16 H6778

BCP 51-16 H6778

IR (Infineon Technologies)

TRANS PNP 45V 1A SOT223

0
BCP6925E6327HTSA1

BCP6925E6327HTSA1

IR (Infineon Technologies)

TRANS PNP 20V 1A SOT-223

0
BCR116E6393HTSA1

BCR116E6393HTSA1

IR (Infineon Technologies)

TRANS PREBIAS NPN SOT23

0
BC 850B B5003

BC 850B B5003

IR (Infineon Technologies)

TRANS NPN 45V 0.1A SOT-23

0
BC 808-40 E6327

BC 808-40 E6327

IR (Infineon Technologies)

TRANS PNP 25V 0.5A SOT-23

0
BC858CWE6327BTSA1

BC858CWE6327BTSA1

IR (Infineon Technologies)

TRANS PNP 30V 0.1A SOT-323

0
BC 817-16 E6327

BC 817-16 E6327

IR (Infineon Technologies)

TRANS NPN 45V 0.5A SOT-23

0
BC 817-40W E6327

BC 817-40W E6327

IR (Infineon Technologies)

TRANS NPN 45V 0.5A SOT-323

0
BCW60FNE6393HTSA1

BCW60FNE6393HTSA1

IR (Infineon Technologies)

TRANSISTOR AF SOT23

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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