Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BFU725F/N1/S115

BFU725F/N1/S115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

72000

PDTA143ZE/DG/B3115

PDTA143ZE/DG/B3115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

2751000

MRFE6VP6600NR3,528

MRFE6VP6600NR3,528

NXP Semiconductors

WIDEBAND RF POWER LDMOS TRANSIST

0

BLF10M6LS200U112

BLF10M6LS200U112

NXP Semiconductors

POWER LDMOS TRANSISTOR

260

PBSS5160PAPS115

PBSS5160PAPS115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

78000

MMRF5017HSR5138

MMRF5017HSR5138

NXP Semiconductors

RF POWER FIELD-EFFECT TRANSISTOR

0

PUMD12/L135

PUMD12/L135

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

100000

BC847CQA147

BC847CQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BCP56-16/DG/B2115

BCP56-16/DG/B2115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

5000

PBSS5130QA,147

PBSS5130QA,147

NXP Semiconductors

PBSS5130QA - 30 V, 1 A PNP LOW V

195000

PDTD143XQA147

PDTD143XQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

29000

MRFE6P3300HR3,128

MRFE6P3300HR3,128

NXP Semiconductors

RF 2-ELEMENT, ULTRA HIGH FREQUEN

0

PDTC143EQA147

PDTC143EQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PDTB113ZQA147

PDTB113ZQA147

NXP Semiconductors

PNP 500MA, 50V RESISTOR-EQUIPPED

3900

PHPT610030PK115

PHPT610030PK115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

25500

PBHV2160Z115

PBHV2160Z115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PDTC123JQA147

PDTC123JQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

143625

PHPT610035NK115

PHPT610035NK115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PBSS4160PANPS115

PBSS4160PANPS115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

12000

PBSS4160PANS115

PBSS4160PANS115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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