Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BLF574XR112

BLF574XR112

NXP Semiconductors

POWER LDMOS TRANSISTOR, SOT1214

43

BC857CQA147

BC857CQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

141020

BLF888DU112

BLF888DU112

NXP Semiconductors

UHF POWER LDMOS TRANSISTOR, SOT5

141

BC856BS/DG/B3115

BC856BS/DG/B3115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

198980

PBHV9515QA147

PBHV9515QA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

55000

BC856BT115

BC856BT115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PMBT4401/S911215

PMBT4401/S911215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BC817-25QA147

BC817-25QA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

160000

PDTB123YQA147

PDTB123YQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

44000

BLF184XR112

BLF184XR112

NXP Semiconductors

POWER LDMOS TRANSISTOR

80

BCM847DS/DG/B2 115

BCM847DS/DG/B2 115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

1932000

BLF10H6600P112

BLF10H6600P112

NXP Semiconductors

POWER LDMOS TRANSISTOR, SOT539 (

14

PBSS5230QA147

PBSS5230QA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BC857CM315

BC857CM315

NXP Semiconductors

NOW NEXPERIA BC857CM

0

BC81716215

BC81716215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BLL6H0514LS-130112

BLL6H0514LS-130112

NXP Semiconductors

LDMOS DRIVER TRANSISTOR, SOT1135

1

PUMD9/L115

PUMD9/L115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BLF6G10LS-135RN112

BLF6G10LS-135RN112

NXP Semiconductors

POWER LDMOS TRANSISTOR, SOT502 (

92

PDTC124XE/DG/B2115

PDTC124XE/DG/B2115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

5301000

BFU910F

BFU910F

NXP Semiconductors

RF SMALL SIGNAL BIPOLAR TRANSIST

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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