Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PBSS5330PAS115

PBSS5330PAS115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BC54-16PASX

BC54-16PASX

NXP Semiconductors

NOW NEXPERIA BC54-16PASX - SMALL

88000

PUMH2/HE115

PUMH2/HE115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

27000

BC846AT,115

BC846AT,115

NXP Semiconductors

TRANS NPN 65V 100MA SC75

0

PDTA114EM/L315

PDTA114EM/L315

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

7000

PDTB143XT215

PDTB143XT215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

45000

PBSS4032NX/DG/B2115

PBSS4032NX/DG/B2115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

17000

BC857BT,115

BC857BT,115

NXP Semiconductors

TRANS PNP 45V 100MA SC75

0

2PA1774S,115

2PA1774S,115

NXP Semiconductors

TRANS PNP 50V 150MA SC75

107765

BC53-10PAS115

BC53-10PAS115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

48000

2PA1774RMB,315

2PA1774RMB,315

NXP Semiconductors

NOW NEXPERIA 2PA1774RMB - SMALL

80970

PVR100AD-B3V3,115

PVR100AD-B3V3,115

NXP Semiconductors

NOW NEXPERIA PVR100AD-B3V3 - FIX

3000

BC857CT,115

BC857CT,115

NXP Semiconductors

TRANS PNP 45V 100MA SC75

45916

BFU550235

BFU550235

NXP Semiconductors

NPN WIDEBAND SILICON RF TRANSIST

10000

PBSS4240X115

PBSS4240X115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

375222

2PB709AR,115

2PB709AR,115

NXP Semiconductors

TRANS PNP 45V 100MA SMT3

0

BC856B/DG/B2215

BC856B/DG/B2215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

90000

PMBT3906/TE1215

PMBT3906/TE1215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

27000

PDTC124EMB

PDTC124EMB

NXP Semiconductors

NOW NEXPERIA PDTC124EMB - SMALL

0

PMSTA55,115

PMSTA55,115

NXP Semiconductors

NOW NEXPERIA PMSTA55 - SMALL SIG

139689

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top