Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PBSS5160QA147

PBSS5160QA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

310000

PHPT610035PK115

PHPT610035PK115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PDTD114EQA147

PDTD114EQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

40000

BC807-25QA147

BC807-25QA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PDTC143XQA147

PDTC143XQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

134000

BC857AQA147

BC857AQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PSMN1R4-40YLD,115

PSMN1R4-40YLD,115

NXP Semiconductors

100A, 40V, 0.00185OHM, N CHANNEL

0

BLC8G27LS-140AV518

BLC8G27LS-140AV518

NXP Semiconductors

LDMOS RF POWER TRANSISTOR

2000

PBSS4260QA147

PBSS4260QA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PBSS4160QA147

PBSS4160QA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

295000

BC847BQA147

BC847BQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PBSS4130QA147

PBSS4130QA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PDTD123YU115

PDTD123YU115

NXP Semiconductors

0.5A, 50V, NPN, SOT323

0

PBSS4140DPN/DG/B2115

PBSS4140DPN/DG/B2115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PDTB143XQA147

PDTB143XQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

40000

BCP56-10H,115

BCP56-10H,115

NXP Semiconductors

80 V, 1 A NPN MEDIUM POWER TRAN

0

PDTD143EQA147

PDTD143EQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

29000

PBHV8515QA147

PBHV8515QA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

5000

BC817-40QA147

BC817-40QA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

100739

PEMH4115

PEMH4115

NXP Semiconductors

0.1A, 50V, 2-ELEMENT, NPN, SOT6

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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