Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PDTA143XQA147

PDTA143XQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

40000

PDTD123EQA147

PDTD123EQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

35000

BC847QAPN147

BC847QAPN147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

2021720

PBSS4360Z115

PBSS4360Z115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PDTA114EQA147

PDTA114EQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

18900

PHPT610030NK115

PHPT610030NK115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

21000

BCM847DS/DG/B2115

BCM847DS/DG/B2115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

12000

BC857QAS147

BC857QAS147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

25785

BLF574112

BLF574112

NXP Semiconductors

HF / VHF POWER LDMOS TRANSISTOR,

53

PBSS5260QA147

PBSS5260QA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

280000

BCM856DS/DG/B2115

BCM856DS/DG/B2115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

6999

PDTD123YQA147

PDTD123YQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

NXP3875Y,215

NXP3875Y,215

NXP Semiconductors

NOW NEXPERIA NXP3875Y - SMALL SI

0

A2T07D160W04SR3128

A2T07D160W04SR3128

NXP Semiconductors

RF POWER LDMOS TRANSISTOR

1368

BUK9E1R9-40E

BUK9E1R9-40E

NXP Semiconductors

BUK9E1R9-40E - I2PAK

0

BLF888DS112

BLF888DS112

NXP Semiconductors

UHF POWER LDMOS TRANSISTOR, SOT5

40

PBSS4230QA147

PBSS4230QA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BLF574XRS112

BLF574XRS112

NXP Semiconductors

POWER LDMOS TRANSISTOR, SOT1214

47

PDTC124EQA147

PDTC124EQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

256476

PDTC144EQA147

PDTC144EQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

19000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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