Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PMBTA42/DG215

PMBTA42/DG215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

24000

BC807-25/L215

BC807-25/L215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PHPT61010NY115

PHPT61010NY115

NXP Semiconductors

POWER BIPOLAR TRANSISTOR NPN

39000

BCW61C/DG/B2215

BCW61C/DG/B2215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

117000

PBSS2540E,115

PBSS2540E,115

NXP Semiconductors

NOW NEXPERIA PBSS2540E - SC-75

0

2PA1774R,135

2PA1774R,135

NXP Semiconductors

TRANS PNP 50V 150MA SC75

0

PMXB65ENE,147

PMXB65ENE,147

NXP Semiconductors

NOW NEXPERIA PMXB65ENE - SMALL S

2082

PDTA123JQA147

PDTA123JQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

125000

PDTA144EQA147

PDTA144EQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

20000

BLF888D112

BLF888D112

NXP Semiconductors

UHF POWER LDMOS TRANSISTOR, SOT5

142

PDTA143ZQA147

PDTA143ZQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

44200

BC857BQA147

BC857BQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

UJA1168TK/FD,118

UJA1168TK/FD,118

NXP Semiconductors

DARLINGTON TRANSISTOR ARRAY

0

PDTC114EQA147

PDTC114EQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

68955

BLF6G15LS-250PBRN112

BLF6G15LS-250PBRN112

NXP Semiconductors

POWER LDMOS TRANSISTOR, SOT1110

59

PDTD113ZQA147

PDTD113ZQA147

NXP Semiconductors

50 V, 500MA NPN RESISTOR-EQUIPPE

18800

BC847AM315

BC847AM315

NXP Semiconductors

45 V, 100MA NPN GENERAL PURPOSE

0

PDTD113EQA147

PDTD113EQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BLF10M6200112

BLF10M6200112

NXP Semiconductors

POWER LDMOS TRANSISTOR

1150

PDTA143EQA147

PDTA143EQA147

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

40000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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