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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
FZT591ATA

FZT591ATA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 1A SOT223

33644000
BCX5116TA

BCX5116TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 1A SOT89

4270
ZXTP25040DZTA

ZXTP25040DZTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 3A SOT89

5691000
ZXTP25040DFHTA

ZXTP25040DFHTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 3A SOT23-3

0
ZX5T955ZTA

ZX5T955ZTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 140V 3A SOT-89

13
ZTX955

ZTX955

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 140V 3A E-LINE

20000
FZT558TA

FZT558TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 400V 0.2A SOT223

26700
BCP5610TA

BCP5610TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 80V 1A SOT223

2147483647
MMBT3906-7-F

MMBT3906-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 0.2A SOT23-3

149448
DXT2013P5-13

DXT2013P5-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 5A POWERDI5

34
ZXTP25020DZTA

ZXTP25020DZTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 5A SOT89

1765
BC857BLP-7

BC857BLP-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 0.1A 3-DFN

100
APT13003DZTR-G1

APT13003DZTR-G1

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 450V 1.5A TO92

0
ZXTP25100BFHTA

ZXTP25100BFHTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 2A SOT23-3

6927
BCW66HQTA

BCW66HQTA

Zetex Semiconductors (Diodes Inc.)

GENERAL PURPOSE TRANSISTOR SOT23

0
MMBTA28-7-F

MMBTA28-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 80V 0.5A SOT23-3

6434
ZXTN25012EFHTA

ZXTN25012EFHTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 12V 6A SOT23-3

2705
BC807-25-7-F

BC807-25-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 0.5A SMD SOT23-3

2538
DCP55-16-13

DCP55-16-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 1A SOT-223

20000
BC848AW-7-F

BC848AW-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 30V 0.1A SC70-3

87000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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