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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
DN0150BLP4-7B

DN0150BLP4-7B

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 50V 0.1A DFN1006H4-3

48
ZTX956STZ

ZTX956STZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 200V 2A E-LINE

128314000
DXTN07025BFG-7

DXTN07025BFG-7

Zetex Semiconductors (Diodes Inc.)

PWR MID PERF TRANSISTOR POWERDI3

1730
FZT653TA

FZT653TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 2A SOT-223

75688
ZXTP19060CZTA

ZXTP19060CZTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 4.5A SOT89

99644000
ZXT13N50DE6TA

ZXT13N50DE6TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 50V 4A SOT23-6

46332
BC857BFA-7B

BC857BFA-7B

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 0.1A X2-DFN0806-3

1194
DSS4160V-7

DSS4160V-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 1A SOT-563

3750
BC846B-7-F

BC846B-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 65V 0.1A SOT23-3

125727
BC847A-7-F

BC847A-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 0.1A SOT23-3

1195
ZXTN2010ZTA

ZXTN2010ZTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 5A SOT89

34993
FCX491TA

FCX491TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 1A SOT-89

2147483647
2DC2412R-7

2DC2412R-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 50V 0.15A SOT23-3

0
MMBTA56Q-13-F

MMBTA56Q-13-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 80V 0.5A SOT23-3

40000
ZXTN4004KQTC

ZXTN4004KQTC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 150V 1A TO252

0
BC807-40-7-F

BC807-40-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 0.5A SOT23-3

3584
DXT2014P5-13

DXT2014P5-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 140V 4A POWERDI5

6248
FMMT555TC

FMMT555TC

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 150V 1A SOT23-3

10597
FZT688BTA

FZT688BTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 12V 4A SOT223

641515000
FZT1149ATA

FZT1149ATA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 25V 4A SOT-223

303

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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