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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
ZXTP25015DFHTA

ZXTP25015DFHTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 15V 4A SOT23-3

1218000
BC848B-7-F

BC848B-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 30V 0.1A SOT23-3

75000
ZXTP5401GTA

ZXTP5401GTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 150V 0.6A SOT223

1526217000
ZXTN4000ZTA

ZXTN4000ZTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 1A SOT89

145742000
DSS4240Y-7

DSS4240Y-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 2A SOT363

0
BC856A-7-F

BC856A-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 65V 0.1A SOT23-3

1141963000
ZXTP25020BFHTA

ZXTP25020BFHTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 4A SOT23-3

3909
DZTA92-13

DZTA92-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 300V 0.5A SOT-223

525
2DA1201Y-7

2DA1201Y-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 120V 0.8A SOT89

7722000
FZT489TA

FZT489TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 30V 1A SOT223

14872000
FCX658ATA

FCX658ATA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 400V 0.5A SOT-89

42551
2DD1766R-13

2DD1766R-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 32V 2A SOT89-3

9997500
APT13003NZTR-G1

APT13003NZTR-G1

Zetex Semiconductors (Diodes Inc.)

IC POWER TRANSISTOR HV TO92

6886
FZTA92TA

FZTA92TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 300V 0.5A SOT-223

112000
ZXTNS618MCTA

ZXTNS618MCTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 4.5A DFN

5934
DSS5540X-13

DSS5540X-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 4A SOT-89

5415
ZTX788ASTZ

ZTX788ASTZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 15V 3A E-LINE

0
APT13003DI-G1

APT13003DI-G1

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 450V 1.5A TO251

2396
ZUMT619TA

ZUMT619TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 50V 1A SC70-3

32869
ZXTP19020DGTA

ZXTP19020DGTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 8A SOT223

668159000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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