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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
ZTX753STZ

ZTX753STZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 2A E-LINE

1050
FZT951TC

FZT951TC

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 5A SOT223

4000
DSS5240T-7

DSS5240T-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 2A SOT-23

397989
BCP53TA

BCP53TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 80V 1A SOT223-4

304
FZT649TC

FZT649TC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 25V 3A SOT223

0
ZXTN25100BFHTA

ZXTN25100BFHTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 3A SOT23-3

11882
FMMT491ATC

FMMT491ATC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 1A SOT23-3

0
MMBT2222AT-7-F

MMBT2222AT-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 0.6A SOT523

2147483647
DCP69-16-13

DCP69-16-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 1A SOT-223

61537500
2DA1774Q-7

2DA1774Q-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 50V 0.15A SOT-523

154
BCP51TA

BCP51TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 1A SOT223-4

16266000
BC817-16W-7

BC817-16W-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 0.5A SC70-3

392790000
ZTX749STZ

ZTX749STZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 25V 2A E-LINE

70000
2DA1774Q-7-F

2DA1774Q-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 50V 0.15A SOT523

0
FZT1051ATC

FZT1051ATC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 5A SOT223

16000
ZTX553

ZTX553

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 1A E-LINE

2147483647
DCX52-16-13

DCX52-16-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 1A SOT89-3

121925000
BC857BT-7-F

BC857BT-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 0.1A SOT523

1386
ZXTN25060BZTA

ZXTN25060BZTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 5A SOT-89

883
FMMT493ATA

FMMT493ATA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 1A SOT23-3

39407

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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