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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
ZXTN4006ZTA

ZXTN4006ZTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 200V 1A SOT89

12620
ZXTP5240F-7

ZXTP5240F-7

Zetex Semiconductors (Diodes Inc.)

SS MID-PERF TRANSISTOR SSOT23

2147483647
2DB1188R-13

2DB1188R-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 32V 2A SOT89-3

391
FZT705TA

FZT705TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP DARL 120V 2A SOT-223

20624
FZT653TC

FZT653TC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 2A SOT223

84000
MMBT3904-7-F

MMBT3904-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 0.2A SMD SOT23-3

780193
BCP5416TA

BCP5416TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 1A SOT223

27830
ZX5T955GTA

ZX5T955GTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 140V 4A SOT-223

1460
MMBTA56-7-F

MMBTA56-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 80V 0.5A SOT23-3

42045
2DA1201YQTC

2DA1201YQTC

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 120V 0.8A SOT89

13
DXT651-13

DXT651-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 3A SOT89-3

4631
ZTX449

ZTX449

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 30V 1A E-LINE

186824000
DPLS160-7

DPLS160-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 1A SOT23-3

692
DSS5240Y-7

DSS5240Y-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 2A SOT363

0
BCP5616QTA

BCP5616QTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 80V 1A SOT223

7631
ZXTP4003ZTA

ZXTP4003ZTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 1A TO-243AA

621873000
BC857AT-7-F

BC857AT-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 0.1A SOT523

31051000
BCX5210TA

BCX5210TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 1A SOT89

1321171000
BC847BW-7-F

BC847BW-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 0.1A SC70-3

548423
FZT600TA

FZT600TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 140V 2A SOT223

8314

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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