ample-chip ample-chip
RFQ
BOM

Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
ZXTN19060CFFTA

ZXTN19060CFFTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 5.5A SOT23F-3

5523
FCX718TA

FCX718TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 2.5A SOT89

6589000
ZXTN19020DZTA

ZXTN19020DZTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 7.5A SOT89

0
ZTX948STZ

ZTX948STZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 4.5A E-LINE

0
ZTX651

ZTX651

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 2A E-LINE

7790
ZXTN25100DZTA

ZXTN25100DZTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 2.5A SOT89

17898
BCX53TA

BCX53TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 80V 1A SOT89

877
BC847C-7-F

BC847C-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 0.1A SOT23-3

6535
DXT2222A-13

DXT2222A-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 0.6A SOT89-3

96283
FZT753TA

FZT753TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 2A SOT-223

22463
BC856AW-7-F

BC856AW-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 65V 0.1A SC70-3

0
ZXTP19100CZTA

ZXTP19100CZTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 2A SOT89

18000
FZT949TA

FZT949TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 30V 5.5A SOT-223

1367
ZTX451STZ

ZTX451STZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 1A E-LINE

14000
BCX5510TA

BCX5510TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 1A SOT89

1000152000
ZXTN25100DFHTA

ZXTN25100DFHTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 2.5A SOT23-3

11236
MMBT2222A-7-F

MMBT2222A-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 0.6A SMD SOT23-3

402535
APT13005T-G1

APT13005T-G1

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 450V 4A TO220AB

0
DSS4160U-7

DSS4160U-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 1A SOT-323

8006
ZXT1053AKTC

ZXT1053AKTC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 75V 5A D-PAK

12008

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top