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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BCP5616TA

BCP5616TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 80V 1A SOT223

1147
ZTX449STZ

ZTX449STZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 30V 1A E-LINE

0
DXTP07100BFG-7

DXTP07100BFG-7

Zetex Semiconductors (Diodes Inc.)

PWR MID PERF TRANSISTOR POWERDI3

1025
FZT655TA

FZT655TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 150V 1A SOT-223

367153000
FCX1051ATA

FCX1051ATA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 3A SOT-89

5384
FMMTA92TA

FMMTA92TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 300V 0.2A SOT23-3

2473
MJD32C-13

MJD32C-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 3A TO252-3L

317
ZXTN25040DFHTA

ZXTN25040DFHTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 4A SOT23-3

28534
BC847BT-7-F

BC847BT-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 0.1A SOT523

2788
FMMT493QTA

FMMT493QTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 1A SOT23-3

2147483647
ZXTN4002ZTA

ZXTN4002ZTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 1A SOT89

0
MMST5551Q-7-F

MMST5551Q-7-F

Zetex Semiconductors (Diodes Inc.)

SS HI VOLTAGE TRANSISTOR SOT323

27000
FCX458TA

FCX458TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 400V 0.225A SOT-89

143794
2DB1188Q-13

2DB1188Q-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 32V 2A SOT89-3

175
FZT788BTA

FZT788BTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 15V 3A SOT-223

493715000
ZXTN2007ZTA

ZXTN2007ZTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 30V 6A SOT89

923722000
DSS4540X-13

DSS4540X-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 4A SOT89-3

10
FZT560TA

FZT560TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 500V 0.15A SOT223

0
DMJT9435-13

DMJT9435-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 30V 3A SOT-223

219
ZXT10N20DE6TA

ZXT10N20DE6TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 3.5A SOT23-6

2241

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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