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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
ZXTP23015CFHTA

ZXTP23015CFHTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 15V 5A SOT23-3

13945
ZXTP25020CFHTA

ZXTP25020CFHTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 4A SOT23-3

5231
BC847AW-7-F

BC847AW-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 0.1A SC70-3

586148000
DXTN07100BFG-7

DXTN07100BFG-7

Zetex Semiconductors (Diodes Inc.)

PWR MID PERF TRANSISTOR POWERDI3

1356
FMMT624TC

FMMT624TC

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 125V 1A SOT23-3

7302
ZXTN2005ZTA

ZXTN2005ZTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 25V 5.5A SOT89

172984000
DCX68-25-13

DCX68-25-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 1A SOT89-3

289022500
2DA2018-7

2DA2018-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 12V 0.5A SOT523

2347
DSS4140U-7

DSS4140U-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 1A SOT-323

5150
ZTX689B

ZTX689B

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 3A E-LINE

28000
DXTN3C60PSQ-13

DXTN3C60PSQ-13

Zetex Semiconductors (Diodes Inc.)

PWR LOW SAT TRANSISTOR POWERDI50

2500
BCP5510TA

BCP5510TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 1A SOT223

1008
FZT651TA

FZT651TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 3A SOT-223

16092
BC857BW-7-F

BC857BW-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 0.1A SC70-3

2969
ZTX603STZ

ZTX603STZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 80V 1A E-LINE

56000
BCX51TA

BCX51TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 1A SOT89

2147483647
2DA1971-13

2DA1971-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 400V 0.5A SOT89

0
ZTX789A

ZTX789A

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 25V 3A E-LINE

183456000
FMMT489TA

FMMT489TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 30V 1A SOT23-3

36355
ZTX1053ASTZ

ZTX1053ASTZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 75V 3A E-LINE

10000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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