ample-chip ample-chip
RFQ
BOM

Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
MMBTA63-7-F

MMBTA63-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP DARL 30V 0.5A SOT23-3

18294
FZT953TA

FZT953TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 5A SOT-223

32152
DNLS160-7

DNLS160-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 1A SOT23-3

2565
FCX705TA

FCX705TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP DARL 120V 1A SOT-89

11547
APT17NTR-G1

APT17NTR-G1

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 480V SOT23

0
ZXTP2008GTA

ZXTP2008GTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 30V 5.5A SOT223

164
DXTA42-13

DXTA42-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 300V 0.5A SOT89-3

0
ZTX757STZ

ZTX757STZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 300V 0.5A E-LINE

12000
BC817-40Q-13-F

BC817-40Q-13-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 500MA SOT23

15882
FMMT558TA

FMMT558TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 400V 0.15A SOT23-3

78072
BC858CW-7-F

BC858CW-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 30V 0.1A SC70-3

50733000
ZTX855STZ

ZTX855STZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 150V 4A E-LINE

22000
BC847BLP-7

BC847BLP-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 0.1A 3-DFN

81550
BC858B-7-F

BC858B-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 30V 0.1A SOT23-3

0
APT13005DT-G1

APT13005DT-G1

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 450V 4A

0
BCP5316TA

BCP5316TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 80V 1A SOT223

650
FZT851TA

FZT851TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 6A SOT-223

4952
FMMT560TA

FMMT560TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 500V 0.15A SOT23-3

41212
ZXTN19055DZTA

ZXTN19055DZTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 55V 6A SOT89

1
ZTX649STZ

ZTX649STZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 25V 2A E-LINE

24000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top