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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
MMBT4401-7-F

MMBT4401-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 0.6A SMD SOT23-3

315981
BC847B-13-F

BC847B-13-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 0.1A SOT-23

113
ZXTP2012ASTZ

ZXTP2012ASTZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 3.5A TO92-3

2568
ZXTP2029FTA

ZXTP2029FTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 3A SOT23-3

24788
ZXTP2014GTA

ZXTP2014GTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 140V 4A SOT223

266228000
DXT2907A-13

DXT2907A-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 0.6A SOT89-3

1970
ZXTPS718MCTA

ZXTPS718MCTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 3.5A DFN

0
FMMT449TA

FMMT449TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 30V 1A SOT23-3

0
DCP69-25-13

DCP69-25-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 1A SOT-223

0
2DB1132Q-13

2DB1132Q-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 32V 1A SOT89-3

47500
DSS4140V-7

DSS4140V-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 1A SOT-563

12000
ZXT13N20DE6TA

ZXT13N20DE6TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 4.5A SOT23-6

2940
2DB1386Q-13

2DB1386Q-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 5A SOT89-3

0
BCP5310TA

BCP5310TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 80V 1A SOT223

5496
2DB1713-13

2DB1713-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 12V 3A SOT89-3

4500
ZXTP2039FTC

ZXTP2039FTC

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 1A SOT-23

0
AC817-40Q-7

AC817-40Q-7

Zetex Semiconductors (Diodes Inc.)

SS LOW SAT TRANSISTOR SOT23 T&R

0
DCP69-13

DCP69-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 1A SOT-223

0
FZT458TA

FZT458TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 400V 0.3A SOT-223

65400
BCP55TA

BCP55TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 1A SOT223-4

709

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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