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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BCP54TA

BCP54TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 1A SOT223-4

618
ZTX869STZ

ZTX869STZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 25V 5A E-LINE

0
DXT3904-13

DXT3904-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 0.2A SOT89-3

1103417500
MJD31CQ-13

MJD31CQ-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 3A DPAK

9990
2DB1132P-13

2DB1132P-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 32V 1A SOT89-3

0
MJD340-13

MJD340-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 300V 0.5A DPAK

0
FMMT551TA

FMMT551TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 1A SOT23-3

0
DSM80100M-7

DSM80100M-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 80V 0.5A SOT26

15000
ZTX658

ZTX658

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 400V 0.5A E-LINE

64000
ZXT10P40DE6TA

ZXT10P40DE6TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 2A SOT23-6

3801
MMBT2907A-7-F

MMBT2907A-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 0.6A SOT23-3

103317
DXTP07060BFG-7

DXTP07060BFG-7

Zetex Semiconductors (Diodes Inc.)

PWR MID PERF TRANSISTOR POWERDI3

1986
ZXTN617MATA

ZXTN617MATA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 15V 4.5A 3-DFN

19806000
ZXT951KTC

ZXT951KTC

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 6A D-PAK

466360000
DXTP07040CFG-7

DXTP07040CFG-7

Zetex Semiconductors (Diodes Inc.)

PWR MID PERF TRANSISTOR POWERDI3

1995
ZTX455STZ

ZTX455STZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 140V 1A E-LINE

0
2DA1971-7

2DA1971-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 400V 0.5A SOT89

62885
ZTX705STZ

ZTX705STZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP DARL 120V 1A E-LINE

0
ZTX549

ZTX549

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 30V 1A E-LINE

63920000
2DB1184Q-13

2DB1184Q-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 50V 3A DPAK

3520

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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