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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
APT13003LZTR-G1

APT13003LZTR-G1

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 450V 0.8A TO92

0
ZTX458STZ

ZTX458STZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 400V 0.3A E-LINE

238000
ZTX751STZ

ZTX751STZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 2A E-LINE

0
ZXTN25040DFLTA

ZXTN25040DFLTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 1.5A SOT23-3

2945
ZXTP25020DFHTA

ZXTP25020DFHTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 4A SOT23-3

4596
FZT696BTA

FZT696BTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 180V 0.5A SOT-223

13766
DSS5160U-7

DSS5160U-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 1A SOT-323

824
DSS2515M-7B

DSS2515M-7B

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 15V 0.5A DFN1006-3

1270940000
DNBT8105-7

DNBT8105-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 1A SOT23-3

177787
DSS5140V-7

DSS5140V-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 1A SOT-563

1170
ZTX601STZ

ZTX601STZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 160V 1A E-LINE

0
MMBTA05-7-F

MMBTA05-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 0.5A SOT23-3

224122
BCX5416TA

BCX5416TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 1A SOT89

209
FMMT717TA

FMMT717TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 12V 2.5A SOT23-3

13284
FZT593TA

FZT593TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 1A SOT-223

8944
2DA1213Y-13

2DA1213Y-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 50V 2A SOT89-3

7500
ZXTN2020FTA

ZXTN2020FTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 4A SOT23-3

8833
ZXTP2039FTA

ZXTP2039FTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 1A SOT23-3

0
ZTX558STZ

ZTX558STZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 400V 0.2A E-LINE

0
MMBT2907AT-7-F

MMBT2907AT-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 0.6A SOT523

69553

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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