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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
DXT13003DG-13

DXT13003DG-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 450V 1.3A SOT223

8841
MMBTA64-7-F

MMBTA64-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP DARL 30V 0.5A SOT23-3

498
BCP56TA

BCP56TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 80V 1A SOT223-4

4285
ZXTN4240F-7

ZXTN4240F-7

Zetex Semiconductors (Diodes Inc.)

SS MID-PERF TRANSISTOR SOT23

10715
MMSTA55-7-F

MMSTA55-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 0.5A SC70-3

9000
ZXTN25012EZTA

ZXTN25012EZTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 12V 6.5A SOT89

4081
BC857CW-7-F

BC857CW-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 0.1A SC70-3

204
AC847BWQ-7

AC847BWQ-7

Zetex Semiconductors (Diodes Inc.)

GENERAL PURPOSE TRANSISTOR SOT32

0
DXTP07025BFG-7

DXTP07025BFG-7

Zetex Semiconductors (Diodes Inc.)

PWR MID PERF TRANSISTOR POWERDI3

1990
ZXTP19020DZTA

ZXTP19020DZTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 6A SOT89

334424000
FCX558TA

FCX558TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 400V 0.2A SOT-89

0
ZTX957

ZTX957

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 300V 1A E-LINE

0
2DD2678-13

2DD2678-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 12V 3A SOT89-3

239615000
2DD1664R-13

2DD1664R-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 32V 1A SOT89-3

0
ZTX605

ZTX605

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 120V 1A E-LINE

4000
2DB1132R-13

2DB1132R-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 32V 1A SOT89-3

3433
MMBT6427-7-F

MMBT6427-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 40V 0.5A SOT23-3

27487
2DB1697-13

2DB1697-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 12V 2A SOT89-3

457
ZXTP2009ZQTA

ZXTP2009ZQTA

Zetex Semiconductors (Diodes Inc.)

PWR LOW SAT TRANSISTOR SOT89

0
DSS4160T-7

DSS4160T-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 1A SOT23

3722

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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