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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
DXTP5820CFDB-7

DXTP5820CFDB-7

Zetex Semiconductors (Diodes Inc.)

PWR LOW SAT TRANSISTOR U-DFN2020

199018000
DP0150ALP4-7B

DP0150ALP4-7B

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 50V 0.1A DFN1006H4-3

0
ZXT11N15DFTA

ZXT11N15DFTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 15V 3A SOT23-3

14
BCX5410TA

BCX5410TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 1A SOT89

2147483647
ZTX553STZ

ZTX553STZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 1A E-LINE

44000
ZTX649

ZTX649

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 25V 2A E-LINE

250736000
BCX5316-13R

BCX5316-13R

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 80V 1A SOT89

16
BC847C-13-F

BC847C-13-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 0.1A SOT-23

11162
ZTX688BSTZ

ZTX688BSTZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 12V 3A E-LINE

0
MJD350-13

MJD350-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 300V 0.5A DPAK

0
FCX591TA

FCX591TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 60V 1A SOT-89

15916
BC847CW-7-F

BC847CW-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 0.1A SC70-3

42182
ZX5T3ZTC

ZX5T3ZTC

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 5.5A SOT-89

1868000
AC848BQ-13

AC848BQ-13

Zetex Semiconductors (Diodes Inc.)

GEN PURPOSE TRANSISTOR SOT23

2147483647
MMBT4403-7-F

MMBT4403-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 0.6A SOT23-3

121644
ZX5T851GTA

ZX5T851GTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 60V 6A SOT223

529715000
ZTX653

ZTX653

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 2A E-LINE

7550
MMSTA06Q-7-F

MMSTA06Q-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 80VSOT323

538212000
ZTX558

ZTX558

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 400V 0.2A E-LINE

84556000
ZX5T953GTA

ZX5T953GTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 5A SOT-223

10319

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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