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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
ZXTN2011GTA

ZXTN2011GTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 6A SOT223

23512000
FZT491ATA

FZT491ATA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 1A SOT223

290
DSS20201L-7

DSS20201L-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 2A SOT-23

2147483647
MMSTA63-7-F

MMSTA63-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP DARL 30V 0.5A SC70-3

299000
BC807-40Q-7-F

BC807-40Q-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 500MA SOT23

1262
2DD2679-13

2DD2679-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 30V 2A SOT89-3

2480
ZXTN04120HFFTA

ZXTN04120HFFTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 120V 1A SOT23F-3

39185
DSS4240V-7

DSS4240V-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 2A SOT-563

2875
FMMT560QTA

FMMT560QTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 500V 0.15A SOT23-3

24000
BST39TA

BST39TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 350V 0.5A SOT-89

39753
FMMT6517TA

FMMT6517TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 350V 0.5A SOT23-3

2147483647
FZT795ATA

FZT795ATA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 140V 0.5A SOT-223

95856000
FMMT6520TA

FMMT6520TA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 350V 0.5A SOT23-3

806
ZTX603

ZTX603

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 80V 1A E-LINE

1641188000
DSS3515M-7B

DSS3515M-7B

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 15V 0.5A DFN1006-3

0
MMBT3906FA-7B

MMBT3906FA-7B

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 0.2A X2-DFN0806-3

100000
ZTX614STZ

ZTX614STZ

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 100V 0.8A E-LINE

0
DZT953-13

DZT953-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 5A SOT223

0
2DA1774QLP-7B

2DA1774QLP-7B

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 0.1A DFN1006-3

336760000
BCX41TA

BCX41TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 125V 0.8A SOT23

11524

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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